DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BFQ540
NPN wideband transistor
Product specification
Supersedes data of 1998 Aug 27
2000 May 23
Philips Semiconductors
Product specification
NPN wideband transistor
FEATURES
•
High gain
•
High output voltage
•
Low noise
•
Gold metallization ensures
excellent reliability
•
Low thermal resistance.
APPLICATIONS
•
VHF, UHF and CATV amplifiers.
Marking code:
N4.
BFQ540
DESCRIPTION
NPN wideband transistor in a SOT89
plastic package.
page
PINNING
PIN
1
2
3
DESCRIPTION
emitter
collector
base
1
Bottom view
2
3
MBK514
Fig.1 SOT89.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CES
V
EBO
I
C
P
tot
h
FE
f
T
s
21
F
Note
1. T
s
is the temperature at the soldering point of the collector pin.
2
PARAMETER
collector-base voltage
collector-emitter voltage
collector-base voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
insertion power gain
noise figure
R
BE
= 0
CONDITIONS
open emitter
open collector
T
s
≤
60
°C;
note 1
I
C
= 40 mA; V
CE
= 8 V; T
j
= 25
°C
I
C
= 40 mA; V
CE
= 8 V; f = 1 GHz;
T
amb
= 25
°C
I
C
= 40 mA; V
CE
= 8 V;
f = 900 MHz; T
amb
= 25
°C
I
C
= 40 mA; V
CE
= 8 V;
f = 900 MHz;
Γ
S
=
Γ
opt
MIN.
−
−
−
−
−
100
−
12
−
TYP.
−
−
−
−
−
120
9
13
1.9
MAX.
20
15
2
120
1.2
250
−
−
2.4
UNIT
V
V
V
mA
W
GHz
dB
dB
2000 May 23
2
Philips Semiconductors
Product specification
NPN wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
T
s
≤
60
°C
open emitter
R
BE
= 0
open collector
CONDITIONS
MIN.
−
−
−
−
−
−65
−
BFQ540
MAX.
20
15
2
120
1.2
+150
175
UNIT
V
V
V
mA
W
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction
to soldering point
CONDITIONS
T
s
≤
60
°C;
P
tot
= 1.2 W
VALUE
95
UNIT
K/W
1.4
Ptot
(W)
1.2
1.0
0.8
MBG241
handbook, halfpage
10
3
MBG244
IC
(mA)
10
2
0.6
0.4
0.2
0
0
50
100
150
Tj
(
o
C)
200
10
1
10
VCE (V)
10
2
V
CE
≤
9 V.
Fig.2 Power derating curve.
Fig.3 SOAR.
2000 May 23
3
Philips Semiconductors
Product specification
NPN wideband transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
I
CBO
I
EBO
h
FE
f
T
C
e
C
re
s
21
V
o
d
2
F
Notes
1. d
im
=
−60
dB (DIN45004B); V
CE
= 8 V; I
C
= 40 mA; R
L
= 50
Ω;
V
p
= V
o
; V
q
= V
o
−6
dB; V
r
= V
o
−6
dB;
f
p
= 795.25 MHz; f
q
= 803.25 MHz; f
r
= 805.5 MHz;
measured at f
p
+ f
q
−
f
r
= 793.25 MHz.
2. d
im
=
−60
dB (DIN 45004B); I
C
= 40 mA; V
CE
= 8 V; R
L
= 50
Ω;
V
p
= V
q
= V
o
; f
p
= 806 MHz; f
q
= 810 MHz;
measured at 2f
p
−
f
q
= 802 MHz.
3. I
C
= 40 mA; V
CE
= 8 V; R
L
= 50
Ω;
V
p
= V
q
= 225 mV; f
p
= 250 MHz; f
q
= 560 MHz;
measured at f
p
+ f
q
= 810 MHz.
2
BFQ540
PARAMETER
collector-base breakdown voltage
emitter-base breakdown voltage
collector-base leakage current
emitter-base leakage current
DC current gain
transition frequency
emitter capacitance
feedback capacitance
insertion power gain
output voltage
second order intermodulation
distortion
noise figure
CONDITIONS
open emitter; I
C
= 10
µA;
I
E
= 0
I
E
= 100
µA;
I
C
= 0
V
CB
= 8 V; I
E
= 0
V
CB
= 1 V; I
C
= 0
I
C
= 40 mA; V
CE
= 8 V
I
C
= 40 mA; V
CE
= 8 V;
f
m
= 1 GHz
I
C
= 0; V
CE
= 8 V; f = 1 MHz
I
C
= 40 mA; V
CE
= 8 V;
f = 900 MHz; T
amb
= 25
°C
note 1
note 2
note 3
I
C
= 40 mA; V
CE
= 8 V;
f = 900 MHz;
Γ
S
=
Γ
opt
MIN.
20
15
2
−
−
100
−
TYP.
−
−
−
−
−
120
9
2
0.9
13
500
350
−
1.9
MAX.
−
−
−
50
200
250
−
−
−
−
−
−
−53
2.4
UNIT
V
V
V
nA
nA
GHz
pF
pF
dB
mV
mV
dB
dB
collector-emitter breakdown voltage R
BE
= 0; I
C
= 40
µA
I
C
= i
e
= 0; V
EB
= 0.5 V; f = 1 MHz
−
−
12
−
−
−
−
2000 May 23
4
Philips Semiconductors
Product specification
NPN wideband transistor
BFQ540
handbook, halfpage
1.0
MRA688
Cre
handbook, halfpage
12
MRA689
(pF)
0.8
fT
(GHz)
8
VCE = 8V
0.6
VCE = 4V
0.4
4
0.2
0
0
4
8
VCB (V)
12
0
10
−1
1
10
IC (mA)
10
2
I
C
= 0; f = 1 MHz.
f = 1 GHz; T
amb
= 25
°C.
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.5
Transition frequency as a function of
collector current; typical values.
MBG242
MBG243
handbook, halfpage
20
dim
(dB)
handbook, halfpage
20
d2
(dB)
30
30
40
40
50
50
60
60
70
10
20
30
40
50
60
IC (mA)
70
10
20
30
40
50
60
IC (mA)
V
CE
= 8 V; V
o
= 475 mV; R
L
= 50
Ω.
f
p
+ f
q
−
f
r
= 793.25 MHz; T
amb
= 25
°C.
V
CE
= 8 V; V
o
= 225 mV; R
L
= 50
Ω;
f
p
+ f
q
= 810 MHz;
T
amb
= 25
°C.
Fig.7
Fig.6
Intermodulation distortion as a function of
collector current; typical values.
Second order intermodulation distortion as
a function of collector current; typical
values.
2000 May 23
5
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