BF545CTRL13 datasheet, PDF - EEWORLD Datasheet

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BF545CTRL13: DescriptionTRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal; CategoryDiscrete semiconductor The transistor; File Size315KB，9 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BF545CTRL13 Overview

TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal

BF545CTRL13 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	NXP
Reach Compliance Code	compliant
Configuration	SINGLE
Minimum drain-source breakdown voltage	30 V
FET technology	JUNCTION
highest frequency band	VERY HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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BF545CTRL13 Related Products

	BF545CTRL13	BF545ATRL13	BF545ATRL	BF545BTRL13	BF545BTRL	BF545CTRL
Description	TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal	TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal	TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal	TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal	TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal	TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Maker	NXP	NXP	NXP	NXP	NXP	NXP
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	30 V	30 V	30 V	30 V	30 V	30 V
FET technology	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION
highest frequency band	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e3	e3	e3	e3	e3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal surface	TIN	TIN	TIN	TIN	TIN	TIN
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	40	40	40	40	40	40
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON

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