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BF556CT/R

Description
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size62KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

BF556CT/R Overview

TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal

BF556CT/R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ConfigurationSINGLE
Minimum drain-source breakdown voltage30 V
FET technologyJUNCTION
highest frequency bandVERY HIGH FREQUENCY BAND
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
BF556A; BF556B; BF556C
N-channel silicon junction field-effect transistors
Rev. 03 — 5 August 2004
Product data sheet
1. Product profile
1.1 General description
N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.
CAUTION
This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken
during transport and handling.
MSC895
1.2 Features
s
Low leakage level (typ. 500 fA)
s
High gain
s
Low cut-off voltage.
1.3 Applications
s
Impedance converters in e.g. electret microphones and infrared detectors
s
VHF amplifiers in oscillators and mixers.
1.4 Quick reference data
Table 1:
Symbol
V
DS
V
GSoff
I
DSS
Quick reference data
Parameter
drain-source
voltage (DC)
gate-source cut-off
voltage
drain current
I
D
= 200
µA;
V
DS
= 15 V
V
GS
= 0 V; V
DS
= 15 V
BF556A
BF556B
BF556C
P
tot
y
fs
total power
dissipation
forward transfer
admittance
T
amb
25
°C
V
GS
= 0 V; V
DS
= 15 V
3
6
11
-
4.5
-
-
-
-
-
7
13
18
250
-
mA
mA
mA
mW
mS
Conditions
Min
-
−0.5
Typ
-
-
Max
±30
−7.5
Unit
V
V

BF556CT/R Related Products

BF556CT/R BF556AT/R BF556BT/R
Description TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET RF Small Signal
Is it Rohs certified? conform to conform to conform to
Maker NXP NXP NXP
Parts packaging code SOT-23 SOT-23 SOT-23
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3
Reach Compliance Code unknown unknown unknown
Configuration SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 30 V 30 V 30 V
FET technology JUNCTION JUNCTION JUNCTION
highest frequency band VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JEDEC-95 code TO-236AB TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3 e3
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface TIN TIN TIN
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 40 40
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
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