
TRANSISTOR 10 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | NXP |
| Parts packaging code | SOT-23 |
| package instruction | PLASTIC PACKAGE-3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 25 V |
| Maximum drain current (ID) | 0.01 A |
| FET technology | JUNCTION |
| Maximum feedback capacitance (Crss) | 1.5 pF |
| JEDEC-95 code | TO-236AB |
| JESD-30 code | R-PDSO-G3 |
| JESD-609 code | e3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | DEPLETION MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 0.3 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin (Sn) |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 40 |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |

| BFR30T/R | BFR30,215 | BFR31-T | BFR30-T | BFR31T/R | |
|---|---|---|---|---|---|
| Description | TRANSISTOR 10 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal | JFET N-CH 10MA 250MW SOT23 | TRANSISTOR 10 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal | TRANSISTOR 10 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal | TRANSISTOR 10 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal |
| Maker | NXP | NXP | NXP | NXP | NXP |
| Parts packaging code | SOT-23 | TO-236 | SOT-23 | SOT-23 | SOT-23 |
| package instruction | PLASTIC PACKAGE-3 | PLASTIC, SMD, SST3, 3 PIN | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | PLASTIC PACKAGE-3 |
| Contacts | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | compliant | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum drain-source breakdown voltage | 25 V | 25 V | 25 V | 25 V | 25 V |
| Maximum drain current (ID) | 0.01 A | 0.01 A | 0.01 A | 0.01 A | 0.01 A |
| FET technology | JUNCTION | JUNCTION | JUNCTION | JUNCTION | JUNCTION |
| Maximum feedback capacitance (Crss) | 1.5 pF | 1.5 pF | 1.5 pF | 1.5 pF | 1.5 pF |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| Number of components | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 |
| Operating mode | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES | YES |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
| Is it Rohs certified? | conform to | conform to | - | - | conform to |
| JEDEC-95 code | TO-236AB | - | TO-236AB | TO-236AB | TO-236AB |
| JESD-609 code | e3 | e3 | - | - | e3 |
| Peak Reflow Temperature (Celsius) | 260 | 260 | - | - | 260 |
| Maximum power dissipation(Abs) | 0.3 W | 0.3 W | - | - | 0.3 W |
| Terminal surface | Tin (Sn) | Tin (Sn) | - | - | TIN |
| Maximum time at peak reflow temperature | 40 | 40 | - | - | 40 |