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BF904WR-TAPE-13

Description
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size220KB,9 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BF904WR-TAPE-13 Overview

TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal

BF904WR-TAPE-13 Parametric

Parameter NameAttribute value
MakerNXP
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionSOURCE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage7 V
Maximum drain current (ID)0.03 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.035 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeDUAL GATE, ENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON

BF904WR-TAPE-13 Related Products

BF904WR-TAPE-13 BF904WR-TAPE-7
Description TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal
Maker NXP NXP
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Other features LOW NOISE LOW NOISE
Shell connection SOURCE SOURCE
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 7 V 7 V
Maximum drain current (ID) 0.03 A 0.03 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 0.035 pF 0.035 pF
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G4 R-PDSO-G4
Number of components 1 1
Number of terminals 4 4
Operating mode DUAL GATE, ENHANCEMENT MODE DUAL GATE, ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
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