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BTA2008W-600D

Description
4 QUADRANT LOGIC LEVEL TRIAC, PLASTIC PACKAGE-4
CategoryAnalog mixed-signal IC    Trigger device   
File Size193KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BTA2008W-600D Overview

4 QUADRANT LOGIC LEVEL TRIAC, PLASTIC PACKAGE-4

BTA2008W-600D Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
package instructionPLASTIC PACKAGE-4
Contacts4
Reach Compliance Codeunknown
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
Trigger device type4 QUADRANT LOGIC LEVEL TRIAC
BTA2008W-600D
8 November 2012
3Q Hi-Com Triac
Product data sheet
1. Product profile
1.1 General description
Planar passivated high commutation three quadrant triac in a SOT223 surface mountable
plastic package. This "series D" triac balances the requirements of commutation
performance and gate sensitivity and is intended for interfacing with low power drivers
and logic ICs including microcontrollers.
1.2 Features and benefits
3Q technology for improved noise immunity
Direct gate triggering from low power drivers and logic ICs
High commutation capability with sensive gate
High voltage capability
Planar passivated for voltage ruggedness and reliability
Surface mountable package
Triggering in three quadrants only
Very sensitive gate for easy logic level triggering
1.3 Applications
Low power motor controls
Small inductive loads e.g. solenoids, door locks, water valves
Small loads in large white goods
1.4 Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
RMS on-state current
full sine wave; T
sp
≤ 111 °C;
Fig. 1;
Fig. 2; Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
0.25
-
5
mA
Conditions
Min
-
-
-
Typ
-
-
-
Max
600
9
0.8
Unit
V
A
A
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