IRFM044DPBF datasheet, PDF - EEWORLD Datasheet

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IRFM044DPBF: DescriptionPower Field-Effect Transistor, 35A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,; CategoryDiscrete semiconductor The transistor; File Size226KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IRFM044DPBF Overview

Power Field-Effect Transistor, 35A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,

IRFM044DPBF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code	compliant
Avalanche Energy Efficiency Rating (Eas)	340 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	35 A
Maximum drain-source on-resistance	0.05 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA
JESD-30 code	R-MSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	180 A
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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IRFM044DPBF Related Products

	IRFM044DPBF	IRFM044U	IRFM044D
Description	Power Field-Effect Transistor, 35A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,	Power Field-Effect Transistor, 35A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,	Power Field-Effect Transistor, 35A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
Is it Rohs certified?	conform to	incompatible	incompatible
Maker	Infineon	Infineon	Infineon
Reach Compliance Code	compliant	unknown	unknown
Avalanche Energy Efficiency Rating (Eas)	340 mJ	340 mJ	340 mJ
Shell connection	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	60 V	60 V
Maximum drain current (ID)	35 A	35 A	35 A
Maximum drain-source on-resistance	0.05 Ω	0.05 Ω	0.05 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA	TO-254AA	TO-254AA
JESD-30 code	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	METAL	METAL	METAL
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	180 A	180 A	180 A
surface mount	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	40	40
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
ECCN code	-	EAR99	EAR99
Maximum drain current (Abs) (ID)	-	35 A	35 A
JESD-609 code	-	e0	e0
Maximum power dissipation(Abs)	-	125 W	125 W
Certification status	-	Not Qualified	Not Qualified
Terminal surface	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)

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