PD-91564G
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-254AA)
Product Summary
Part Number
IRHM7064
IRHM3064
IRHM4064
IRHM8064
Radiation Level
100K Rads (Si)
300K Rads (Si)
500K Rads (Si)
1000K Rads (Si)
R
DS(on)
0.021Ω
0.021Ω
0.021Ω
0.030Ω
I
D
35A*
35A*
35A*
35A*
IRHM7064
JANSR2N7431
60V, N-CHANNEL
REF:MIL-PRF-19500/663
RAD-Hard HEXFET TECHNOLOGY
™
®
QPL Part Number
JANSR2N7431
JANSF2N7431
JANSG2N7431
JANSH2N7431
TO-254AA
International Rectifier’s RAD-Hard
TM
HEXFET
®
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices have
been characterized for both Total Dose and Single
Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
*Current is limited by package
For footnotes refer to the last page
35*
35*
140
250
2.0
±20
500
35
25
2.5
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063 in.(1.6mm) from case for 10s)
9.3 (Typical)
g
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1
08/10/07
IRHM7064, JANSR2N7431
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
60
—
—
2.0
18
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.056
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.021
4.0
—
25
250
100
-100
270
60
110
27
120
120
100
V
V/°C
Ω
V
S
µA
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 35A
Ã
VDS = VGS, ID = 1.0mA
VDS
≥
15V, IDS = 35A
Ã
VDS = 48V ,VGS = 0V
VDS = 48V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 35A
VDS = 30V
VDD = 30V, ID = 35A
VGS =12V, RG = 2.35Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
nC
ns
Measured from Drain lead (6mm /0.25in
LS + LD
Total Inductance
—
6.8
—
nH
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
4900
2800
860
—
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
35*
140
1.5
360
3.1
Test Conditions
A
V
ns
µC
T
j
= 25°C, IS = 35A, VGS = 0V
Ã
Tj = 25°C, IF = 35A, di/dt
≤
100A/µs
VDD
≤
50V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
*Current is limited by package
Thermal Resistance
Parameter
RthJC
RthJA
RthCS
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
Min Typ Max Units
—
—
—
— 0.50
—
48
0.21 —
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHM7064, JANSR2N7431
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
Ã
On-State Resistance (TO-3)
Diode Forward Voltage
Ã
Up to 500K Rads(Si)
1
1000K Rads (Si)
2
Units
V
nA
µA
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
= 48V, V
GS
=0V
V
GS
= 12V, I
D
= 35A
V
GS
= 0V, IS = 35A
Min
60
2.0
—
—
—
—
—
Max
—
4.0
100
-100
25
0.021
1.5
Min
60
1.25
—
—
—
—
—
Max
—
4.5
100
-100
50
0.030
1.5
1. Part numbers IRHM7064 (JANSR2N7431), IRHM3064 (JANSF2N7431) and IRHM4064 (JANSG2N7431)
2. Part number IRHM8064 (JANSH2N7431U)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Br
I
LET
(MeV/(mg/cm
2
))
36.8
59.9
Energy
(MeV)
305
345
Range
V
DS
(V)
(µm)
@
V
GS
=0V @
V
GS
=-5V @
V
GS
=-10V @
V
GS
=-15V
39
60
60
45
40
32.8
40
35
30
25
@
V
GS
=-20V
30
20
70
60
50
VDS
40
30
20
10
0
0
-5
-10
VGS
-15
-20
BR
I
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHM7064, JANSR2N7431
Pre-Irradiation
1000
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
100
10
0.1
20µs PULSE WIDTH
5.0V
T = 25
°
C
J
1
10
100
V
DS
, Drain-to-Source Voltage (V)
10
0.1
5.0V
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
35A
I
D
= 79A
I
D
, Drain-to-Source Current (A)
2.0
T
J
= 25
°
C
1.5
100
T
J
= 150
°
C
1.0
0.5
10
V DS = 25V
20µs PULSE WIDTH
5
6
7
8
9
10
11
12
0.0
-60 -40 -20
V
GS
= 12V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHM7064, JANSR2N7431
10000
8000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 35A
V
DS
= 48V
V
DS
= 30V
V
DS
= 12V
16
C, Capacitance (pF)
6000
Ciss
Coss
12
4000
8
2000
Crss
4
0
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
50
100
150
200
250
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
T
J
= 25
°
C
I
SD
, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
100
T
J
= 150
°
C
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µs
10
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
VDS , Drain-to-Source Voltage (V)
1
0.0
V
GS
= 0 V
1.0
2.0
3.0
4.0
5.0
10
10ms
100
V
SD
,Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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