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MBR2535CT

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 35V V(RRM), Silicon, TO-220AB,
CategoryDiscrete semiconductor    diode   
File Size91KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
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MBR2535CT Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 35V V(RRM), Silicon, TO-220AB,

MBR2535CT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompliant
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.82 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current150 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage35 V
Maximum reverse current200 µA
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Certificate TH97/10561QM
Certificate TW00/17276EM
MBR2535CT ~ MBR2560CT
PRV : 35 ~ 60 Volts
Io : 30 Amperes
FEATURES :
* Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
* Dual rectifier construction, positive center tap
* Metal silicon junction, majority carrier conduction
* Low power loss, high efficiency
* Guardring for overvoltage protection
* For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
* High temperature soldering : 250°C/10 seconds,
0.25" (6.35mm) from case
* Pb / RoHS Free
* Case : JEDEC TO-220AB molded plastic body
* Terminals: Plated leads, solderable per
MIL-STD-750 Method 2026
* Polarity: As marked
* Mounting Position: Any
* Weight : 2.24 grams (Approximately)
DUAL SCHOTTKY
BARRIER RECTIFIERS
TO-220AB
0.154(3.91)DIA.
0.415(10.54)MAX.
0.148(3.74)
0.113(2.87)
0.103(2.62)
0.635(16.13)
0.625(15.87)
1 2 3
PIN 1
PIN 2
CASE
PIN 3
0.205(5.20)
0.195(4.95)
0.037(0.94)
0.027(0.68)
0.105(2.67)
0.095(2.41)
0.055(1.39)
0.045(1.14)
0.185(4.70)
0.175(4.44)
0.145(3.68)
0.135(3.43)
0.350(8.89)
0.330(8.39)
0.160(4.06)
0.140(3.56)
0.603(15.32)
0.573(14.55)
0.560(14.22)
0.530(13.46)
0.022(0.56)
0.014(0.36)
MECHANICAL DATA :
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
at T
C
= 130 °C
Total device
Per leg
( Tc = 25 °C unless otherwise noted)
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
MBR
2535CT
35
35
35
MBR
2545CT
45
45
45
MBR
2550CT
50
50
50
30
15
MBR
2560CT
60
60
60
UNIT
V
V
V
A
A
Peak Forward Surge Current, 8.3ms single half sine wave
superimposed on rated load (JEDEC Method) Per leg
Maximum Instantaneous Forward Voltage per leg (Note 1)
at I
F
= 15 A, T
C
= 25 °C
at I
F
= 15 A, T
C
= 125 °C
at I
F
= 30 A, T
C
= 25 °C
at I
F
= 30 A, T
C
= 125 °C
Maximum Reverse Current at Rated DC
Blocking Voltage per leg (Note 1)
Operating Temperature Range
Storage Temperature Range
Note :
(1) Pulse test : 300 µs pluse width, 1% duty cycle
Page 1 of 2
T
C
= 25 °C
T
C
= 125 °C
150
-
V
F
-
0.82
0.73
I
R
I
R(H)
R
ӨJC
T
J
T
STG
0.2
40
1.5
- 65 to + 150
- 65 to + 175
0.75
0.65
-
-
1.0
50
mA
mA
°C/W
°C
°C
V
Typical Thermal Resistance from Junction to Case Per leg
Rev. 01 : March 9, 2006

MBR2535CT Related Products

MBR2535CT MBR2560CT
Description Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 35V V(RRM), Silicon, TO-220AB, Rectifier Diode,
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
Reach Compliance Code compliant compliant

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