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TG5032CDN50.0000M-CAANNA0

Description
CMOS Output Clock Oscillator,
CategoryPassive components    oscillator   
File Size569KB,2 Pages
ManufacturerSeiko Epson Corporation
Environmental Compliance
Download Datasheet Parametric View All

TG5032CDN50.0000M-CAANNA0 Overview

CMOS Output Clock Oscillator,

TG5032CDN50.0000M-CAANNA0 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSeiko Epson Corporation
package instructionLCC4,.12X.2,173/95
Reach Compliance Codeunknown
Ageing1 PPM/FIRST YEAR
maximum descent time8 ns
Frequency Adjustment - MechanicalNO
frequency stability0.1%
Installation featuresSURFACE MOUNT
Number of terminals4
Nominal operating frequency50 MHz
Maximum operating temperature70 °C
Minimum operating temperature
Oscillator typeCMOS
Output load15 pF
Encapsulate equivalent codeLCC4,.12X.2,173/95
physical size5mm x 3.2mm x 1.45mm
longest rise time8 ns
Maximum slew rate8 mA
Maximum supply voltage3.465 V
Minimum supply voltage3.135 V
Nominal supply voltage3.3 V
surface mountYES
maximum symmetry55/45 %
Crystal oscillator
TCXO / VC-TCXO
ULTRA HIGH STABILITY
Product Number (please contact us)
TG5032CDN :X1G005061xxxx00
TG5032SDN :X1G005071xxxx00
TG5032CDN
TG5032SDN
•Frequency
range
:
10 MHz to 50 MHz
•Supply
voltage
:
3.3 V Typ. / 5.0V Typ.
•Frequency
/ temperature characteristics
:
±0.1× 10
-6
Max.
*1
•Frequency
aging
:
±0.02× 10
-6
Max./24 hours
*2
•External
dimensions
:
5.0 × 3.2 × 1.45 mm (4 pads)
•Applications
:
FemtoCell, Small Cells
•Features
:
Ultra high stability
Actual size
Specifications (characteristics)
Item
Output frequency range
Supply voltage
Storage temperature
Operating temperature
Frequency tolerance
Symbol
f
0
V
CC
T_stg
T_use
f_tol
TG5032CDN (CMOS output) TG5032SDN(Clipped sine wave)
VC-TCXO
TCXO
VC-TCXO
TCXO
10 MHz to 50 MHz
19.2, 26, 30.72, 40 MHz
C: 3.3 V ±5%, H: 5.0 V ±5% (Supply voltage range :2.7 V to 5.5 V)
-40 ºC to +90 ºC
A: 0 ºC to +70 ºC
±2.0 × 10
-6
Max.
A: ±0.1 ×10
-6
Max. / A: 0 to +70 ºC (standard spec.)
Frequency/temperature
Characteristics
*1
f
0
-T
C
H: ±0.25 ×10
-6
Max. / G: -40 to +85 ºC
±0.08 ×10 Max. / +50 to +70 ºC, ±0.1 ×10
-6
Max. / +15 to +85 ºC
and ±0.25 ×10
-6
Max. / -5 to +85 ºC
-6
±0.08 ×10 Max. / +40 to +60 ºC, ±0.1 ×10
-6
Max. / 0 to +70 ºC
and ±0.25 ×10
-6
Max. / -20 to +70 ºC
±0.1 ×10
-6
Max. (10 MHz≦f
0
≦40
MHz)
±0.2 ×10
-6
Max. (40 MHz<f
0
≦50
MHz)
±0.1 ×10
-6
Max. (10 MHz≦f
0
≦40
MHz)
±0.2 ×10
-6
Max. (40 MHz<f
0
≦50
MHz)
±0.02 ×10
-6
Max.
±1.0 ×10
-6
Max.
5.0 mA Max. / 6.0 mA Max.
6.0 mA Max. / 8.0 mA Max.
5.0 mA Max.
8.0 mA Max. / 10.0 mA Max.
100 kΩ Min.
100 kΩ Min.
-6
Conditions / Remarks
Standard frequency
Storage as single product
Standard temp. range
After reflow, +25 ºC
C: 0 to +85 ºC or L: -10 to +70 ºC
: Option1 or 2 (Temperature range)
Option3
Option4
(Please contact us about suffix)
Option5
(Please contact us about suffix)
Load ±10 %
V
CC
±5%
+25 °C, 24h
+25 °C, First year
10 MHz≦f
0
≦26
MHz (3.3V / 5.0V)
26 MHz<f
0
≦40
MHz (3.3V / 5.0V)
40 MHz<f
0
≦50
MHz (3.3V / 5.0V)
V
C
- GND (DC)
D :V
C
=1.5 V ± 1.0 V at V
CC
=3.3 V
E: V
C
=1.65 V ± 1.0 V at V
CC
=3.3 V
H: V
C
=2.5 V ± 2.0 V at V
CC
=5.0 V
Frequency/load coefficient
Frequency/voltage coefficient
Frequency aging
*2
Current consumption
Input resistance
Frequency control range
Frequency change polarity
Symmetry
f
0
-Load
f
0
-V
CC
f_age
I
CC
Rin
f_cont
±5 ×10
-6
to
±10 ×10
-6
±5 ×10
-6
to
±10 ×10
-6
Positive polarity
Positive polarity
SYM
45 % to 55 %
GND level (DC cut)
V
OH
90 % V
CC
Min.
Output voltage
V
OL
10 % V
CC
Max.
Output level
V
PP
0.8 V Min.
Peak to Peak
Start-up time
t_str
5.0 ms Max.
T=0 at 90% Vcc
Output load condition
Load
15 pF
10 kΩ//10 pF
* Note : Please contact us for requirements not listed in this specification. *1 Based on frequency at (fmax+fmin)/2. *2 After 48 hours operating
Product Name
(Standard form)
TG5032 C DN 19.200000MHz C A A N D A
④ ⑤ ⑥ ⑦ ⑧ ⑨
①Model ②Output
(C: CMOS, S: Clipped sine wave)
③Frequency ④Supply
voltage
(C: 3.3 V Typ.)
⑤Frequency
/ temperature characteristics (A:
±0.1 ×
10
-6
Max.)
⑥Operating
temperature (A: 0
°C
to +70
°C)
⑦OE
function (N: Non)
⑧V
C
function (A: V
C
=any, D: V
C
=1.5 V, E: V
C
=1.65 V, H: V
C
=2.5 V, N: Non)
⑨Internal
identification code (“A” is default)
dimensions
(Unit :mm)
Footprint (Recommended)
(Unit :mm)
#3
External
#4
#1
5.00±0.2
#2
0.30
1.45±0.2
0.30
Pin map
Pin
1
2
3
4
Connection
VC-TCXO
TCXO
V
C
N.C
GND
OUT
V
CC
0.95
0.75
#1
#2
#1
4.40
#2
To maintain stable operation, provide a 0.1 μF by-pass capacitor at
a location as near as possible to the power source terminal of the
crystal product (between V
CC
- GND).
#4
#3
1.10 1.30
Marking
3.20±0.2
#4
1.10
#3
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