6A, 100V, 0.565ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Renesas Electronics Corporation |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Other features | RADIATION HARDENED |
| Shell connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (Abs) (ID) | 6 A |
| Maximum drain current (ID) | 6 A |
| Maximum drain-source on-resistance | 0.565 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-257AA |
| JESD-30 code | R-MSFM-P3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | METAL |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | P-CHANNEL |
| Maximum power consumption environment | 50 W |
| Maximum power dissipation(Abs) | 50 W |
| Maximum pulsed drain current (IDM) | 18 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | PIN/PEG |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 204 ns |
| Maximum opening time (tons) | 214 ns |
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