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1N5230B

Description
4.7 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
Categorysemiconductor    Discrete semiconductor   
File Size488KB,3 Pages
ManufacturerDIOTECH
Websitehttp://www.kdiode.com/
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1N5230B Overview

4.7 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35

1N5230B Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Rated working voltage4.7 V
Processing package descriptionGLASS, SC-40, 2 PIN
stateACTIVE
packaging shapeROUND
Package SizeLONG FORM
Terminal formWIRE
terminal coatingTIN LEAD
Terminal locationAXIAL
Packaging MaterialsGLASS
CraftsmanshipZENER
structureSINGLE
Shell connectionISOLATED
Diode component materialsSILICON
Maximum power consumption limit0.5000 W
polarityUNIDIRECTIONAL
Diode typeVOLTAGE REGULATOR DIODE
Working test current20 mA
Maximum total reference voltage5 %
1N5221B THRU 1N5267B
500mW EPITAXIAL ZENER DIODE
FEATURES
. Standards zener voltage tolerance is 20%. Add suffix "A" for 10%
tolerance and suffix "B" for 5% tolerance other tolerance, non
standards and higher zener voltage upon request.
DO-35
Φ
0.5 ±
0.1
MECHANICAL DATA
.
Polarity
: Color band denotes cathode end
.
Weight
: Approx. 0.13gram
Φ
1.8 ±
All Dimensions in mm
ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)
(T
A
=25℃ )
Symbols
Zener current see table "Characteristics"
Power dissipation at T
A
=75℃
Junction temperature
Storage temperature range
P
tot
T
J
T
STG
26 ± 1
3.8 ± 0.2
0.2
.
Case
: DO-35 glass case
26 ± 1
Value
Units
mW
500
1)
175
-65 to + 200
1)Valid provided that at a distance of 8mm from case are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
(TA=25℃ )
Symbols
Thermal resistance junction to ambient
Forward voltage
at I
F
=200mA
R
THA
V
F
Min.
Typ.
Max.
0.3
1)
1.1
Units
K
/mW
V
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature
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