BZT52C2V4 - BZT52C43
SURFACE MOUNT ZENER DIODE
Features
Planar Die Construction
500mW Power Dissipation on Ceramic PCB
General Purpose, Medium Current
Ideally Suited for Automated Assembly
Processes
A
C
D
B
E
G
Dim
A
B
C
D
E
SOD-123
Min
3.6
2.5
1.4
0.5
—
0.4
0.95
—
Max
3.9
2.8
1.8
0.7
0.2
—
1.35
0.12
Mechanical Data
Case: SOD-123, Plastic
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: See Below
Weight: 0.01 grams (approx.)
H
J
G
H
J
All Dimensions in mm
Cathode
ELECTRICAL SYMBOL
Anode
Maximum Ratings
Type Number
Forward Voltage
@T
A
=25°C unless otherwise specified
@ IF = 10mA
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air
(Note 1)
Operating and Storage Temperature Range
Symbol
V
F
Pd
R
JA
Value
0.9
500
305
-55 to + 150
Units
V
mW
O
C /W
O
T
J
, T
STG
C
Notes: 1.
Device Mounted on Ceramic PCB, 7.6mm x 9.4mm x 0.87mm with Pad Areas 25mm
2.
2. Tested with Pulses. Period = 5ms, Pulse Width = 300us
3. When Provided, Otherwise, Parts are Provided with Date Code only, and Type Number
Identifications Appears on reel only.
4. f = 1KHz.
BZT52C2V4 - BZT52C43
SURFACE MOUNT ZENER DIODE
Electrical Characteristics
ZENER VOLTAGE
V
Z (1)
VOLTS
Min.
2.28
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
Nom
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
Max.
2.56
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
@T
A
=25°C unless otherwise specified
Type
Maximum Zener
Impedance
(2)
Z
ZT
(OHMS)
I
ZT
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
5
Max.
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
100
Maximum Zener
Impedance
(2)
Z
ZK
(OHMS)
I
ZK
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
1.0
Max.
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
700
REVERSE
CURRENT
I
R
(Max) @ V
R
uA
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.1
25.2
27.3
32.0
BZT52C2V4
BZT52C2V7
BZT52C3V0
BZT52C3V3
BZT52C3V6
BZT52C3V9
BZT52C4V3
BZT52C4V7
BZT52C5V1
BZT52C5V6
BZT52C6V2
BZT52C6V8
BZT52C7V5
BZT52C8V2
BZT52C9V1
BZT52C10
BZT52C11
BZT52C12
BZT52C13
BZT52C15
BZT52C16
BZT52C18
BZT52C20
BZT52C22
BZT52C24
BZT52C27
BZT52C30
BZT52C33
BZT52C36
BZT52C39
BZT52C43
Typical
Temperature
Coefficent
@ I
ZTC
mV/
-3.5
0
-3.5
0
-3.5
0
-3.5
0
-3.5
0
-3.5
0
-3.5
0
-3.5
0.2
-2.7
1.2
-2.0
2.5
0.4
3.7
1.2
4.5
2.5
5.3
3.2
6.2
3.8
7.0
4.5
8.0
5.4
9.0
6.0
10.0
7.0
11.0
9.2
13.0
10.4 14.0
12.4 16.0
14.4 18.0
16.4 20.0
18.4 22.0
21.4 25.3
24.4 29.4
27.4 33.4
30.4 37.4
33.4 41.2
10.0 12.0
Marking
WX
W1
W2
W3
W4
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
WJ
WK
WL
WM
WN
WO
WP
WQ
WR
WS
WT
WU
(1) Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25 mm
2
(2) f=1KHz
KD
0.6
BZT52C2V4 - BZT52C43
RATINGS AND CHARACTERISTIC CURVES
50
T
j
= 25°C
C2V7
C3V9
C5V6
C6V8
C6V2
C8V2
0.5
0.4
I
Z
, ZENER CURRENT (mA)
40
C3V3
C4V7
P
D
, POWER DISSIPATION (W)
30
0.3
20
0.2
0.1
10
Test Current I
Z
5.0mA
0
0
0
25
50
75
100
125
150
0
1
T
A
, AMBIENT TEMPERATURE ( C)
Fig. 1 Power Dissipation vs Ambient Temperature
3
4
5
6
8
9
7
V
Z
, ZENER VOLTAGE (V)
Fig. 2 Zener Breakdown Characteristics
C39
C47
C43 C51
2
10
30
T
j
= 25°C
C10
C12
10
Tj = 25°C
I
Z
, ZENER CURRENT (mA)
20
C15
I
Z
, ZENER CURRENT (mA)
8
6
C18
Test current I
Z
2mA
C27
C33
C36
10
C22
Test current I
Z
5mA
4
Test Current I
Z
2mA
2
0
0
10
20
30
V
Z
, ZENER VOLTAGE (V)
Fig. 3 Zener Breakdown Characteristics
1000
40
0
10
30 40 50 60 70 80 90 100
V
Z
, ZENER VOLTAGE (V)
Fig. 4 Zener Breakdown Characteristics
20
T
j
= 25 °C
C
j
, JUNCTION CAPACITANCE (pF)
V
R
= 1V
V
R
= 2V
100
V
R
= 1V
V
R
= 2V
10
1
10
100
V
Z
, NOMINAL ZENER VOLTAGE (V)
Fig. 5 Junction Capacitance vs Nominal Zener Voltage
Discrete Device
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