BZX84C2V4 - BZX84C39
SURFACE MOUNT ZENER DIODE
FEATURES
●
Planar Die construction
●
410mW Power Dissipation
●
Ideally Suited for Automated Assembly Processes
●
Pb free product are available : 99% Sn above can
meet Rohs environment substance directive request
SOT-23
Dim
A
L
Top View
3
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
A
B
C
2
B S
1
D
G
H
J
K
J
MECHANICAL DATA
●
Case: SOT-23, Molded Plastic
●
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
●
Polarity: See Diagrams Below
●
Weight: 0.008 grams (approx.)
V
G
C
D
H
K
L
S
V
All Dimension in mm
3
1
2
Maximum Ratings
Type Number
Forward Voltage
@T
A
=25°C unless otherwise specified
@ IF = 10mA
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air
(Note 1)
Operating and Storage Temperature Range
Symbol
V
F
Pd
R
JA
Value
0.9
410
357
-55 to + 150
Units
V
mW
O
C /W
O
T
J
, T
STG
C
Notes:
1. Valid provided the device terminals are kept at ambient temperature.
BZX84C2V4 - BZX84C39
RATINGS AND CHARACTERISTIC CURVES
500
50
T
j
= 25°C
C2V7
C3V9
C5V6
C6V8
C8V2
C9V1
P
d
, POWER DISSIPATION (mW)
I
Z
, ZENER CURRENT (mA)
400
40
C3V3
C4V7
300
30
200
20
100
10
Test Current I
Z
5.0mA
0
0
100
200
0
0
1
3
4
5
6
8
9
7
V
Z
, ZENER VOLTAGE (V)
Fig. 2 Zener Breakdown Characteristics
2
10
T
A
, Ambient Temperature, (°C)
Fig. 1 Power Derating Curve
30
T
j
= 25°C
C10
C12
1000
T
j
= 25°C
C
T
, TOTAL CAPACITANCE (pF)
V
R
= 1V
V
R
= 2V
I
Z
, ZENER CURRENT (mA)
20
C15
C18
Test current I
Z
2mA
C27
C33
C36
C39
100
V
R
= 1V
10
C22
Test current I
Z
5mA
V
R
= 2V
10
0
1
10
100
0
10
20
30
V
Z
, ZENER VOLTAGE (V)
Fig. 3 Zener Breakdown Characteristics
40
V
Z
, NOMINAL ZENER VOLTAGE (V)
Fig. 4 Total Capacitance vs Nominal Zener Voltage
Renesas Electronics MCUs
京公网安备 11010802033920号
EEWORLD
