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GBJ610

Description
2.8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size334KB,2 Pages
ManufacturerDIOTECH
Websitehttp://www.kdiode.com/
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GBJ610 Overview

2.8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

GBJ6005 THRU GBJ610
Reverse Voltage - 50 to 1000 Volts
GLASS PASSIVATED BRIDGE RECTIFIER
Forward Current - 6.0 Ampere
FEATURES
Glass passivated chip junction
Reliable low cost construction utilizing molded
plastic technique
Ideal for printed circuit board
Low reverse leakage current
Low forward voltage drop
High surge current capabiliy
GBJ
MECHANICAL DATA
Case:Molded plastic, GBJ
Terminals
:
Terminals: Leads solderable per MIL-STD-202
method 208 guaranteed
Epoxy: UL 94V-0 rate flame retardant
Mounting Position: Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current with
Heatsink at T
C
= 100
O
C
Peak Forward Surge Current, 8.3 ms Single Half-Sine
-Wave superimposed on rated load (JEDEC Method)
Maximum Forward Voltage at 3.0 A DC and 25
O
C
Maximum Reverse Current at T
A
= 25
O
C
at Rated DC Blocking Voltage T
A
= 125
O
C
Typical Junction Capacitance
Typical Thermal Resistance
2)
Operating and Storage Temperature Range
1)
2)
1)
Symbols
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
C
J
R
θ
JC
T
J
,T
S
GBJ
6005
50
35
50
GBJ
601
100
70
100
GBJ
602
200
140
200
GBJ
604
400
280
400
6
170
1.1
5.0
500
55
1.8
GBJ
606
600
420
600
GBJ
608
800
560
800
GBJ
610
1000
700
1000
Units
V
V
V
A
A
V
µA
pF
O
C/W
O
-55 to +150
C
Measured at 1 MHz and applied reverse voltage of 4 VDC.
Thermal resistance from junction to case with device mounted on 300 mm X 300 mm X 1.6 mm Cu plate
heatsink.

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GBJ610 GBJ601 GBJ602 GBJ604 GBJ606 GBJ608 GBJ6005
Description 2.8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

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