GDZJ - SERIES
500mW EPITAXIAL ZENER DIODE
FEATURES
•
Planar die construction
•
500mW Power Dissipation
•
Ideally Suited for Automated Assembly Processes
•
High temperature soldering : 260°C /10 seconds at terminals
•
Glass package has Underwriters Laboratory Flammability
Classification
•
In compliance with EU RoHS 2002/95/EC directives
DO-35
Φ
0.5 ±
0.1
•
Case: Molded Glass DO-35
•
Terminals: Axial leads, solderable per MIL-STD-202G, Method 208
•
Polarity:
See Diagram Below
•
Mounting position:Any
•
Weight: 0.13 gram
Φ
1.8 ±
MECHANICAL DATA
All Dimensions in mm
ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)(T
A
=25℃)
Symbols
Zener current see table "Characteristics"
Power dissipation at TA=25℃
Junction temperature
Storage temperature range
Value
Units
P
tot
T
J
T
STG
500
175
-65 to +175
26 ± 1
3.8 ± 0.2
0.2
26 ± 1
mW
℃
℃
1)Valid provided that a distance of 8mm from case are kept at ambient temperature
ELECTRCAL CHARACTERISTICS(T
A
=25℃)
Symbols
Thermal resistance junction to ambient
Forward voltage at IF=100mA
Min
Typ
Max
0.3
1.0
Units
R
thA
V
F
K
/ mW
V
1) Valid provided that a distance at 8mm from case are kept at ambient temperature
GDZJ - SERIES
500mW EPITAXIAL ZENER DIODE
Part Number
GDZJ 2.0
GDZJ 2.2
GDZJ 2.4
GDZJ 2.7
GDZJ 3.0
GDZJ 3.3
GDZJ 3.6
GDZJ 3.9
C LA S S
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
C
A
V
Z
@ I
ZT
M i n. V
1.88
2.02
2.12
2.22
2.33
2.43
2.54
2.69
2.85
3.01
3.16
3.32
3.455
3.60
3.74
3.89
4.04
4.17
4.30
4.44
4.55
4.68
4.81
4.94
5.09
5.28
5.45
5.61
5.78
5.96
6.12
6.29
6.49
6.66
6.85
7.07
7.29
7.53
7.78
8.03
8.29
8.57
8.83
9.12
9.41
9.70
9.94
10.18
10.50
10.82
M a x. V
2.10
2.20
2.30
2.41
2.52
2.63
2.75
2.91
3.07
3.22
3.38
3.53
3.695
3.845
4.01
4.16
4.29
4.43
4.57
4.68
4.80
4.93
5.07
5.20
5.37
5.55
5.73
5.91
6.09
6.27
6.44
6.63
6.83
7.01
7.22
7.45
7.67
7.92
8.19
8.45
8.73
9.01
9.30
9.59
9.90
10.20
10.44
10.71
11.05
11.38
IZ
(m A )
5
5
5
5
5
5
5
5
VR
(V )
0.5
0.7
1.0
1.0
1.0
1.0
1.0
1.0
IR ( u A )
MA X
120
100
120
100
50
20
10
5
Iz t
(mA )
5
5
5
5
5
5
5
5
Z
ZT
(
Ω
)
MA X
100
100
100
110
120
120
100
100
Iz k
(mA )
0.5
0.5
0.5
0.5
0.5
0.5
1
1
Z
ZK
(
Ω
)
MA X
1000
1000
1000
1000
1000
1000
1000
1000
M
A RK ING
C OD E
Z2A0
Z2B0
Z2A2
Z2B2
Z2A4
Z2B4
Z2A7
Z2B7
Z3A0
Z3B0
Z3A3
Z3B3
Z3A6
Z3B6
Z3A9
Z3B9
Z4A3
Z4B3
Z4C3
Z4A7
GDZJ 4.3
5
1.0
5
5
100
1
1000
GDZJ 4.7
B
C
A
5
1.0
5
5
90
1
900
Z4B7
Z4C7
Z5A1
GDZJ 5.1
B
C
A
5
1.5
5
5
80
1
800
Z5B1
Z5C1
Z5A6
GDZJ 5.6
B
C
A
5
2.5
5
5
60
1
500
Z5B6
Z5C6
Z6A2
GDZJ 6.2
B
C
A
5
3.0
5
5
60
1
300
Z6B2
Z6C2
Z6A8
GDZJ 6.8
B
C
A
5
3.5
2
5
20
0.5
150
Z6B8
Z6C8
Z7A5
GDZJ 7.5
B
C
A
5
4.0
0.5
5
20
0.5
120
Z7B5
Z7C5
Z8A2
GDZJ 8.2
B
C
A
5
5.0
0.5
5
20
0.5
120
Z8B2
Z8C2
Z9A1
GDZJ 9.1
B
C
A
B
C
D
A
5
6.0
0.5
5
25
0.5
120
Z9B1
Z9C1
Z10A
Z10B
Z10C
Z11D
Z11A
GDZJ 10
5
7.0
0.2
5
30
0.5
120
GDZJ 11
B
C
5
8.0
0.2
5
30
0.5
120
Z11B
Z11C
GDZJ - SERIES
500mW EPITAXIAL ZENER DIODE
Part Number
GDZJ 12
LA S S
A
B
C
A
V
Z
@ I
ZT
M i n. V
11.13
11.44
11.74
12.11
12.55
12.99
13.44
13.89
14.35
14.80
15.25
15.69
16.22
16.82
17.42
18.02
18.63
19.23
19.72
20.15
20.64
21.08
21.52
22.05
22.61
23.12
23.63
24.26
24.97
25.63
26.29
26.99
27.70
28.36
29.02
29.68
30.32
30.90
31.49
32.14
32.79
33.40
34.01
34.68
35.36
36.00
36.63
40.00
44.00
48.00
53.00
M a x. V
11.71
12.03
12.35
12.75
13.21
13.66
14.13
14.62
15.09
15.57
16.04
16.51
17.06
17.70
18.33
18.96
19.59
20.22
20.72
21.20
21.71
22.17
22.63
23.18
23.77
24.31
24.85
25.52
26.26
26.95
27.64
28.39
29.13
29.82
30.51
31.22
31.88
32.50
33.11
33.79
34.49
35.13
35.77
36.47
37.19
37.85
38.52
45.00
49.00
54.00
60.00
IZ
(m A )
5
VR
(V )
9.0
IR ( u A )
MA X
0.2
Iz t
(mA )
5
Z
ZT
(
Ω
)
MA X
30
Iz k
(mA )
0.5
Z
ZK
(
Ω
)
MA X
110
M
A RK ING
C
OD E
Z12A
Z12B
Z12C
Z13A
GDZJ 13
B
C
A
5
10
0.2
5
35
0.5
110
Z13B
Z13C
Z15A
GDZJ 15
B
C
A
5
11
0.2
5
40
0.5
110
Z15B
Z15C
Z16A
GDZJ 16
B
C
A
5
12
0.2
5
40
0.5
150
Z16B
Z16C
Z18A
GDZJ 18
B
C
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
A
B
C
D
5
13
0.2
5
45
0.5
150
Z18B
Z18C
Z20A
Z20B
Z20C
Z20D
Z22A
Z22B
Z22C
Z22D
Z24A
Z24B
Z24C
Z24D
Z27A
Z27B
Z27C
Z27D
Z30A
Z30B
Z30C
Z30D
Z33A
Z33B
Z33C
Z33D
Z36A
Z36B
Z36C
Z36D
Z39A
Z39B
Z39C
Z39D
Z43
Z47
Z51
Z56
GDZJ 20
5
15
0.2
5
55
0.5
200
GDZJ 22
5
17
0.2
5
30
0.5
200
GDZJ 24
5
19
0.2
5
35
0.5
200
GDZJ 27
5
21
0.2
5
45
0.5
250
GDZJ 30
5
23
0.2
5
55
0.5
250
GDZJ 33
5
25
0.2
5
65
0.5
250
GDZJ 36
5
27
0.2
5
75
0.5
250
GDZJ 39
5
30
0.2
5
85
0.5
250
GDZJ 43
GDZJ 47
GDZJ 51
GDZJ 56
5
5
5
5
33
36
39
43
0.2
0.2
0.2
0.2
5
5
5
5
90
90
110
110
--
--
--
--
--
--
--
--
GDZJ - SERIES
RATINGS AND CHARACTERISTIC CURVES
R
thJA
–Therm.R esist. Junction/Ambient ( K /W )
500
V
Ztn
– R elative Voltage Change
1.3
V
Ztn
=V
Zt
/V
Z
(25°C)
400
1.2
TK
VZ
=10 x 10
–4
/K
8 x 10
–4
/K
6 x 10
–4
/K
4 x 10
–4
/K
2 x 10
–4
/K
300
l
l
1.1
200
100
T
L
=constant
1.0
0.9
0.8
–60
0
–2 x 10
–4
/K
–4 x 10
–4
/K
0
0
5
10
15
20
l – Lead Length ( mm )
0
60
120
180
240
T
j
– Junction Temperature (°C )
Fig. 1 Thermal Resistance vs. Lead Length
Fig. 4 Typical Change of Working Voltage vs. Junction
Temperature
TK
V Z
– Temperature Coefficient of V
Z
( 10
– 4
/K)
P
ot
– Total Power Dissipation ( mW)
t
600
500
400
300
200
15
10
5
I
Z
=5mA
0
100
0
0
40
80
120
160
200
T
amb
– Ambient Temperature(°C )
–5
0
10
20
30
40
50
V
Z
– Z-Voltag e ( V )
Fig. 2 Total Power Dissipation vs. Ambient Temperature
Fig. 5 Temperature Coefficient of Vz vs. Z-Voltage
1000
C
D
– Diode Capacitance ( pF )
200
V
Z
– Voltage Change ( mV )
T
j
=25°C
150
V
R
=2V
T
j
=25°C
100
100
I
Z
=5mA
10
50
1
0
5
10
15
20
25
V
Z
– Z-Voltag e ( V )
0
0
5
10
15
20
25
V
Z
– Z-Voltag e ( V )
Fig. 3 Typical Change of Working Voltage under Operating
Conditions at T
amb
=25°C
Fig. 6 Diode Capacitance vs. Z-Voltage
GDZJ - SERIES
RATINGS AND CHARACTERISTIC CURVES
100
I
F
– Forward Current ( mA )
50
P
tot
=500mW
=25°C
T
amb
T
j
=25°C
1
I
Z
– Z- Current (mA )
10
40
30
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
V
F
– Forward Voltage ( V )
20
10
0
15
20
25
30
35
V
Z
– Z-Voltag e ( V )
Fig. 7 Forward Current vs. Forward Voltage
Fig. 9 Z-Current vs. Z-Voltage
I
Z
– Z- Current (mA )
80
P
tot
=500mW
T
amb
=25°C
r
Z
– Differential Z- R esistance (
Ω
)
100
1000
I
Z
=1mA
100
60
5mA
10
10mA
40
20
0
0
4
8
12
16
20
1
0
5
10
15
T
j
=25°C
20
25
V
Z
– Z-Voltage ( V )
V
Z
– Z-Voltage ( V )
Fig. 8 Z-Current vs. Z-Voltage
Z
thp
– Thermal R esistance for Pulse Cond.(K/W )
Fig. 10 Differential Z-Resistance vs. Z-Voltage
1000
t
p
/T=0.5
100
t
p
/T=0.2
Single Pulse
R
thJA
=300K/W
T=T
jmax
–T
amb
10
t
p
/T=0.1
t
p
/T=0.02
t
p
/T=0.05
t
p
/T=0.01
i
ZM
=(–V
Z
+(V
Z2
+4r
zj
x
T/Z
thp
)
1/2 zj
)
)/(2r
1
10
–1
10
0
10
1
t
p
– Pulse Length ( ms )
10
2
Fig. 11 Thermal Response
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