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KBP207G

Description
2 A, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size393KB,2 Pages
ManufacturerDIOTECH
Websitehttp://www.kdiode.com/
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KBP207G Overview

2 A, SILICON, BRIDGE RECTIFIER DIODE

KBP201G THRU KBP207G
Reverse Voltage - 50 to 1000 Volts
SINGLE PHASE SILICON BRIDGE RECTIFIER
Forward Current - 2.0 Ampere
FEATURES
Ideal for printed circuit board
Surge overload rating: 60A peak
High case dielectric strength
High temperature soldering guaranteed:
260°C/10 seconds at 5lbs. (2.3kg) tension
KBP
.460(11.68)
.420(10.6)
.035(0.9)
.028(0.7)
AC
.5 (12.7)
MIN
.160(4.1)
SPACING
.140(3.6)
MECHANICAL DATA
Case:
UL-94 Class V-0 recognized Flame Retardant Epoxy
Terminals
:
Plated leads solderable per
MIL-STD 202, method 208
Mounting Position: Any
Weight: 1.70 g
Marking: Type Number
.600(15.24)
.560(14.22)
.153(3.9)
.146(3.7)
.050(1.27)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
CHARACTERISTICS
SYMBOL
V
RRM
V
RMS
V
DC
o
KBP201G KBP202G KBP203G KBP204G KBP205G KBP206G KBP207G
UNITS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current at T
A
= 25 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum DC Forward Voltage Drop per Bridge
Element at 2.0A DC
Maximum Reverse Current at rated
DC Blocking Voltage per element
Operating and Storage Temperature Range
@T
A
= 25
o
C
@T
A
= 125 C
o
50
35
50
100
70
100
200
140
200
400
280
400
2.0
60
1.1
10.0
500
-55 to + 150
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
μA
0
I
O
I
FSM
V
F
I
R
T
J,
T
STG
C
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