BAS40
BAS40-04
BAS40-05
BAS40-06
SILICON PLANAR SCHOTTKY DIODE
Pin Configuration:
1. ANODE
2. NC
3. CATHODE
Pin Configuration:
1. ANODE
2. CATHODE
3. ANODE/CATHODE
Pin Configuration:
1. ANODE
2. ANODE
3. CATHODE
Pin Configuration:
1. CATHODE
2. CATHODE
3. ANODE
SOT-23 SMD Package
Unit: inch (mm)
Absolute Maximum Ratings
(per diode)
DESCRIPTION
Reverse Voltage
Forward Current
Surge Forward Current t=10ms
Power Dissipation T
a
= 25 C
Storage Temperature Range
Junction Temperature
Thermal Resistance
From junction to ambient
o
General Purpose Schottky Diode for High Speed switching
SYMBOL
V
R
I
F
I
FSM
P
D
Tstg
Tj
R
th(j-a)*
VALUE
40
120
200
250
- 55 to +150
150
430
UNITS
V
mA
mA
mW
o
C
K/W
*Mounted on a ceramic substrate of 10mm x 8mm x 0.6mm
Electrical Characteristics
(Ta=25
o
C unless otherwise specified) (per diode)
DESCRIPTION
Reverse Braekdown Voltage
Reverse Current
SYMBOL TEST CONDITION
I
R
= 10uA
V
R
I
R
V
R
= 30V
V
R
= 40V
I
F
= 1mA
MIN
40
MAX
1
10
0.38
0.50
1.00
5.00
UNITS
V
uA
Forward Voltage
V
F
Diode Capacitance
www.rectron.com
I
F
= 10mA
I
F
= 40mA
V
C
T
V
R
= 40V
pF
1 of 1