J/SST174/175/176/177 Series
Vishay Siliconix
P-Channel JFETs
J174
J175
J176
J177
SST174
SST175
SST176
SST177
PRODUCT SUMMARY
Part Number
J/SST174
J/SST175
J/SST176
J/SST177
V
GS(off)
(V)
5 to 10
3 to 6
1 to 4
0.8 to 2.25
r
DS(on)
Max (W)
85
125
250
300
I
D(off)
Typ (pA)
–10
–10
–10
–10
t
ON
Typ (ns)
25
25
25
25
FEATURES
D
D
D
D
D
Low On-Resistance: J174 <85
W
Fast Switching—t
ON
: 25 ns
Low Leakage: –10 pA
Low Capacitance: 5 pF
Low Insertion Loss
BENEFITS
D
D
D
D
D
Low Error Voltage
High-Speed Analog Circuit Performance
Negligible “Off-Error,” Excellent Accuracy
Good Frequency Response
Eliminates Additional Buffering
APPLICATIONS
D
D
D
D
D
Analog Switches
Choppers
Sample-and-Hold
Normally “On” Switches
Current Limiters
DESCRIPTION
The J/SST174 series consists of p-channel analog switches
designed to provide low on-resistance and fast switching. This
series simplifies series-shunt switching applications when
combined with the Siliconix J/SST111 series.
The TO-226AA (TO-92) plastic package provides a low-cost
option, while the TO-236 (SOT-23) package provides
surface-mount capability. Both the J and SST series are
available in tape-and-reel for automated assembly (see
Packaging Information).
TO-236
(SOT-23)
TO-226AA
(TO-92)
D
1
D
G
2
S
S
3
2
1
3
G
Top View
Top View
J174
J175
J176
J177
SST174 (S4)*
SST175 (S5)*
SST176 (S6)*
SST177 (S7)*
*Marking Code for TO-236
For applications information see AN104.
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
www.vishay.com
9-1
J/SST174/175/176/177 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Lead Temperature (
1
/
16
” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipation
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS FOR J/SST174 AND J/SST175 (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST174
J/SST175
Parameter
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
b
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Unit
V
(BR)GSS
V
GS(off)
I
DSS
I
GSS
I
G
I
D(off)
r
DS(on)
V
GS(F)
I
G
= 1
mA
, V
DS
= 0 V
V
DS
= –15 V, I
D
= –10 nA
V
DS
= –15 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
T
A
= 125_C
V
DG
= –15 V, I
D
= –1 mA
V
DS
= –15 V, V
GS
= 10 V
T
A
= 125_C
V
GS
= 0 V, V
DS
= –0.1 V
I
G
= –1 mA , V
DS
= 0 V
45
30
5
–20
10
–135
1
30
3
–7
6
–70
1
V
mA
0.01
5
0.01
–0.01
–5
nA
–1
–1
85
–0.7
125
W
V
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Drain-Source On-Resistance
Common-Source Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage
g
fs
g
os
r
ds(on)
C
iss
C
rss
e
n
V
DS
= –15 V, I
D
= –1 mA
f = 1 kHz
V
GS
= 0 V, I
D
= 0 mA , f = 1 kHz
V
DS
= 0 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 0 V, V
GS
= 10 V
f = 1 MHz
V
DG
= –10 V, I
D
= –1 mA
f = 1 kHz
20
5
20
pF
nV⁄
√Hz
4.5
20
85
125
mS
mS
W
Switching
Turn-On Time
t
d(on)
t
r
Turn-Off Time
t
d(off)
t
f
V
GS(L)
= 0 V, V
GS(H)
= 10 V
See Switching Circuit
10
15
10
20
PSCIA
ns
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW
v300
ms
duty cycle
v3%.
www.vishay.com
9-2
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
J/SST174/175/176/177 Series
Vishay Siliconix
SPECIFICATIONS FOR J/SST176 AND J/SST177 (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST176
J/SST177
Parameter
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
b
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Unit
V
(BR)GSS
V
GS(off)
I
DSS
I
GSS
I
G
I
D(off)
r
DS(on)
V
GS(F)
I
G
= 1
mA
, V
DS
= 0 V
V
DS
= –15 V, I
D
= –10 nA
V
DS
= –15 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
T
A
= 125_C
V
DG
= –15 V, I
D
= –1 mA
V
DS
= –15 V, V
GS
= 10 V
T
A
= 125_C
V
GS
= 0 V, V
DS
= –0.1 V
I
G
= –1 mA , V
DS
= 0 V
45
30
1
–2
4
–35
1
30
0.8
–1.5
2.25
–20
1
V
mA
0.01
5
0.01
–0.01
–5
nA
–1
–1
250
–0.7
300
W
V
Dynamic
Common-Source
Forward Transconductance
Common-Source Output Conductance
Drain-Source On-Resistance
Common-Source Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage
g
fs
g
os
r
ds(on)
C
iss
C
rss
e
n
V
DS
= –15 V, I
D
= –1 mA
f = 1 kHz
V
GS
= 0 V, I
D
= 0 mA , f = 1 kHz
V
DS
= 0 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 0 V, V
GS
= 10 V
f = 1 MHz
V
DG
= –10 V, I
D
= –1 mA
f = 1 kHz
20
5
20
pF
nV⁄
√Hz
4.5
20
250
300
mS
mS
W
Switching
t
d(on)
Turn-On Time
t
r
t
d(off)
t
f
V
GS(L)
= 0 V, V
GS(H)
= 10 V
See Switching Circuit
10
15
10
20
PSCIA
ns
Turn-Off Time
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW
v300
ms
duty cycle
v3%.
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
www.vishay.com
9-3
J/SST174/175/176/177 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
200
r
DS(on)
– Drain-Source On-Resistance (
Ω )
I
DSS
160
r
DS
120
–60
–80
g
fs
– Forward Transconductance (mS)
I
DSS
– Saturation Drain Current (mA)
15
g
fs
12
g
os
150
–100
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
18
g
fs
and g
os
@ V
DS
= –15 V
V
GS
= 0 V, f = 1 kHz
200
g os – Output Conductance (
m
S)
250
80
–40
9
100
40
r
DS
@ I
D
= –1 mA, V
GS
= 0 V
I
DSS
@ V
DS
= –15 V, V
GS
= 0 V
–20
6
50
0
0
2
4
6
8
10
V
GS(off)
– Gate-Source Cutoff Voltage (V)
0
3
0
2
4
6
8
V
GS(off)
– Gate-Source Cutoff Voltage (V)
0
10
Output Characteristics
–25
V
GS(off)
= 3 V
–20
I D – Drain Current (mA)
0.5 V
–15
1.0 V
–10
1.5 V
–5
2.0 V
0
0
–4
–8
–12
–16
–20
r
DS(on)
– Drain-Source On-Resistance (
Ω )
V
GS
= 0 V
250
On-Resistance vs. Drain Current
T
A
= 25_C
200
V
GS(off)
= 1.5 V
150
3V
100
5V
50
0
–1
–10
I
D
– Drain Current (mA)
–100
V
DS
– Drain-Source Voltage (V)
Output Characteristics
–2
V
GS
= 0 V
r
DS(on)
– Drain-Source On-Resistance (
Ω )
1.5 V
–1.6
I D – Drain Current (mA)
0.5 V
1.0 V
–1.2
2.0 V
–0.8
240
300
On-Resistance vs. Temperature
I
D
= –1 mA
r
DS
changes X 0.7%/_C
180
V
GS(off)
= 1.5 V
3V
120
5V
–0.4
V
GS(off)
= 3 V
0
0
–0.1
–0.2
–0.3
–0.4
–0.5
60
0
–55
–35
–15
5
25
45
65
85
105
125
V
DS
– Drain-Source Voltage (V)
www.vishay.com
T
A
– Temperature (_C)
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
9-4
J/SST174/175/176/177 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Turn-On Switching
50
t
r
approximately independent of I
D
V
DD
= –10 V, R
G
= 220
W
V
GS(H)
= 10 V, V
GS(L)
= 0 V
40
16
5V
Switching Time (ns)
Switching Time (ns)
30
12
t
d(off)
V
GS(off)
= 1.5 V
8
5V
4
V
DD
= –10 V, V
GS(H)
= 10 V, V
GS(L)
= 0 V
0
0
1
2
3
4
5
0
0
–3
–6
–9
–12
–15
20
t
f
V
GS(off)
= 1.5 V
Turn-Off Switching
t
ON
@ I
D
= –5 mA
t
ON
@ I
D
= –10 mA
20
10
t
r
@ I
D
= –5 mA
V
GS(off)
– Gate-Source Cutoff Voltage (V)
I
D
– Drain Current (mA)
Capacitance vs. Gate-Source Voltage
30
V
DS
= 0 V
f = 1 MHz
24
I G – Gate Leakage
Capacitance (pF)
100 nA
10 nA
Gate Leakage Current
I
D
= –1 mA
–10 mA
1 nA
T
A
= 125_C
I
GSS
@ 125_C
18
C
iss
12
C
rss
6
100 pA
–10 mA
10 pA
T
A
= 25_C
–1 mA
I
GSS
@ 25_C
1 pA
0
0
4
8
12
16
20
0.1 pA
0
–10
–20
–30
–40
–50
V
GS
– Gate-Source Voltage (V)
V
DG
– Drain-Gate Voltage (V)
Transfer Characteristics
–40
V
GS(off)
= 3 V
–32
I D – Drain Current (mA)
Hz
V
DS
= –15 V
100
Noise Voltage vs. Frequency
I
D
= –0.1 mA
en – Noise Voltage nV /
–24
T
A
= –55_C
–1 mA
10
–16
25_C
–8
125_C
0
0
1
2
3
4
5
V
DS
= –10 V
1
10
100
1k
f – Frequency (Hz)
10 k
100 k
V
GS
– Gate-Source Voltage (V)
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
www.vishay.com
9-5
京公网安备 11010802033920号
EEWORLD
