White Electronic Designs
Compact Linear Flash
Memory Card - CLF11 Series
CLF11 Series Compact Linear Flash Memory Card
8, 16 and 32 MB (Intel Strata Flash )
GENERAL DESCRIPTION
The CLF11 Series Compact Flash memory cards offer
a low cost linear Flash solid state storage solution for
code and data storage, high performance disk emula-
tion, mobile PC and embedded applications.
CLF11 series cards offer memory capacities from 8MB
to 32MB, with 256kB (2x128kB) block erase size.
It is based on Intel MLC, Strata Flash memories. Cards
are based on the J3 families of memory components:
built with: 28F128J3, 28F640J3, 28F320J3
These flash devices support the Common Flash Inter-
face (CFI) programming algorithm, a standard that al-
lows system level software to evaluate the flash con-
figuration, electrical characteristic, programming param-
eters and supported functions. CFI is intended to sup-
port future upgrades with universal programming algo-
rithms, so there is no longer a need for continued pro-
gramming software modification and updates. Systems
should be able to recognize and support all devices to
allow universal expansion/upgrade path.
The symmetrically blocked architecture and single sup-
ply (universal 3.3V or 5V for CLF11 cards) operation pro-
vides a cost effective, high performance, nonvolatile stor-
age solution. The Compact Flash Card form factor of-
fers an industry standard pinout and mechanical out-
line, allowing density upgrades without system design
changes.
The CLF11 series is designed as a simple x16 linear
array of Flash devices. Two Flash devices provide the
lower and upper bytes for the 16 bit access. (See Func-
tional Truth Table on page 5)
WEDCs standard cards are shipped with blank hous-
ings . Please contact WEDC sales representative for
further information on Custom artwork.
FEATURES
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Small Form Factor: CF compatible
- 36.4 x 42.8 x 3.3 mm
Low cost Linear Flash Card
Single Supply Operation
- 5V or 3.3V (Note 1)
Fast Read Performance
- 200ns Maximum Access Time
Based on MLC J3 Strata Flash Components
Common Flash Interface (CFI) compliant
Erase sector size: 2x 128kB
High Performance Random Writes
- 6µs Typical per Byte Write Time, using 32Byte
Write buffer
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Automated Write and Erase Algorithms
High Write/Erase Endurance:
100,000 Write/Erase Cycles
Low Power Consumption
- 150µA Standby Current
- 75mA Max Byte Write Current
Note 1:
CLF11 supports wide, universal operating voltage: 3V to 5V.
That means the card will work in 3.3V systems as well as in 5V
systems. This feature may allow easy exchange of data between
multiple and different systems and provide easy upgrade / expansion
path.
March 2003 Rev. 3
ECO #16070
1
White Electronic Designs Corporation (508) 485-4000 www.whiteedc.com
White Electronic Designs
Compact Linear Flash
Memory Card - CLF11 Series
For information regarding modes of operation, commands, and programming details
for the memory components, please consult the Intel StrataFlash J3 data sheet.
http://developer.intel.com/design/flcomp/datashts/290667.htm
Writing commands to the CUI enables reading of device data, query, identifier codes, inspection and clearing of the
status register, and, when V
PEN
= V
PENH
, block erasure, program, and lock-bit configuration.
The Block Erase command requires appropriate command data and an address within the block to be erased. The
Byte/Word Program command requires the command and address of the location to be written. Set Block Lock-Bit
commands require the command and block within the device to be locked. The Clear Block Lock-Bits command
requires the command and address within the device.
The CUI does not occupy an addressable memory location. It is written when the device is enabled and WE is
active. The address and data needed to execute a command are latched on the rising edge of WE or the first edge
of CE
1
or CE
2
that disables the card. Standard microprocessor write timings are used.
P
INOUT
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
Signal name
GND
DQ
3
DQ
4
DQ
5
DQ
6
DQ
7
CE
1
A
11
OE
A
10
A
9
A
8
V
CC
A
7
A
6
A
5
A
4
A
3
A
2
A
1
DQ
0
DQ
1
DQ
2
A
12
CD
2
I
I
I
I
I
I
I
I/O
I/O
I/O
I
O
I/O
I/O
I/O
I/O
I/O
I
I
I
I
I
I
I/O
Function
Ground
Data bit 3
Data bit 4
Data bit 5
Data bit 6
Data bit 7
Card enable 1
Address bit 10
Output enable
Address bit 11
Address bit 9
Address bit 8
Supply Voltage
Address bit 7
Address bit 6
Address bit 5
Address bit 4
Address bit 3
Address bit 2
Address bit 1
Data bit 0
Data bit 1
Data bit 2
Address bit 12
Card Detect 2
LOW
LOW
LOW
Active
Pin
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
Signal name
CD
1
DQ
11
DQ
12
DQ
13
DQ
14
DQ
15
CE
2
A
22
A
21
A
20
WE
A
24
V
CC
A
19
A
18
A
23
A
17
A
16
A
15
A
14
A
13
DQ
8
DQ
9
DQ
10
GND
I
I
I
I
I
I
I
I
I/O
I/O
O
I/O
O
I/O
I/O
I/O
I/O
I
I
I
I
I
I
I
Function
Card Detect 1
Data bit 11
Data bit 12
Data bit 13
Data bit 14
Data bit 15
Card enable 2
Address bit 22
Address bit 21
Address bit 20
Write Enable
Address bit 24
Supply Voltage
Address bit 19
Address bit 18
Address bit 23
Address bit 17
Address bit 16
Address bit 15
Address bit 14
Address bit 13
Data bit 8
Data bit 9
Data bit 10
Ground
LOW
LOW
LOW
Active
LOW
Notes:
16 bit operation; using 2 independent Low and High byte enables: single byte access ability
3
White Electronic Designs Corporation (508) 485-4000 www.whiteedc.com
White Electronic Designs
MECHANICAL
42.8mm
Compact Linear Flash
Memory Card - CLF11 Series
3.3mm
36.4mm
25.78mm
2 sides
Pin 26
1.60mm
1.27mm (Pitch)
Pin 1
Pin 25
Pin 50
1.00mm
1mm
C
ARD
S
IGNAL
D
ESCRIPTION
Symbol
A
1
- A
25
DQ
0
- DQ
15
CE
1
OE
WE
CD
1
, CD
2
V
CC
GND
Type
INPUT
INPUT/
OUTPUT
INPUT
INPUT
INPUT
OUTPUT
Name and Function
ADDRESS INPUTS:
A
0
through A
25
enable direct addressing of up to 64MB of memory on the card
DATA INPUT/OUTPUT:
DQ
0
THROUGH DQ
15
constitute the bi-directional databus. DQ
0
- DQ
7
constitute the lower
(even) byte and DQ
8
- DQ
15
the upper (odd) byte. DQ
15
is the MSB.
CARD ENABLE 1:
CE
1
enables card accesses (See below the Functional Truth Table).
OUTPUT ENABLE:
Active low signal enabling read data from the memory card.
WRITE ENABLE:
Active low signal gating write data to the memory card.
CARD DETECT 1 and 2:
Provide card insertion detection. These signals are connected to ground internally on the
memory card. The host socket interface circuitry shall supply 10K-ohm or larger pull-up resistors on these signal pins.
CARD POWER SUPPLY:
(5.0V for FVF0x or
GROUND:
3V to 5V for FVF1x)
F
UNCTIONAL
T
RUTH
T
ABLE
Function Mode
Standby Mode
Output Desible
Read Function
LOW Byte Access (8 bits)
Read Function
HIGH Byte Access (8 bits)
Read Function
Word Access (16 bits)
WRITE function
LOW Byte Access (8 bits)
WRITE function
HIGH Byte Access (8 bits)
WRITE function
Word Access (16 bits)
CE
2
H
L
H
L
L
H
L
L
CE
1
H
L
L
H
L
L
H
L
OE
X
H
L
L
L
H
H
H
WE
X
H
H
H
H
L
L
L
D
15
-D
8
High-Z
High-Z
High-Z
Odd-Byte Out
Odd-Byte Out
X
X
Odd-Byte In
Odd-Byte In
D
7
-D
0
High-Z
High-Z
Even-Byte Out
High-Z
Even-Byte Out
Even-Byte In
X
X
Even-Byte In
White Electronic Designs Corporation Marlborough MA (508) 485-4000
4
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