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JANSP2N3501

Description
Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size746KB,8 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANSP2N3501 Overview

Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN

JANSP2N3501 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrosemi
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codecompliant
Other featuresHIGH RELIABILITY
Shell connectionCOLLECTOR
Maximum collector current (IC)0.3 A
Collector-emitter maximum voltage150 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-205AD
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusQualified
GuidelineMIL-19500; RH - 30K Rad(Si)
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)1150 ns
Maximum opening time (tons)115 ns
JANS 2N3498 thru JANS 2N3501
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/366
DESCRIPTION
This family of JANS 2N3498 through JANS 2N3501 epitaxial, planar transistors are military
qualified in five RHA (Radiation Hardness Assurance) levels for high-reliability applications.
These devices are also available in TO-5 and low profile surface mount UB packaging.
Microsemi also offers numerous other radiation hardened transistor products to meet higher
and lower power ratings with various switching speed requirements in both through-hole and
surface-mount packages.
compliant
Qualified Levels:
JANSM, JANSD,
JANSP, JANSL and
JANSR
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
JEDEC registered 2N3498 through 2N3501 series numbers.
RHA level JAN qualifications per MIL-PRF-19500/366 (see
part nomenclature
for all options).
RoHS compliant by design.
TO-39
(TO-205AD)
Package
Also available in:
TO-5 package
APPLICATIONS / BENEFITS
General purpose transistors for medium power applications requiring high frequency switching and
radiation hardness.
Leaded TO-39 package.
Lightweight.
Military and other high-reliability, rad-hard applications.
(long-leaded)
JANS 2N3498L – 2N3501L
UB package
(surface mount)
JANS 2N3501UB
MAXIMUM RATINGS
@ T
C
= +25 ºC unless otherwise noted
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Case
Total Power Dissipation
@ T
A
= +25 °C
(2)
@ T
C
= +25 °C
(1)
Symbol
V
CEO
V
CBO
V
EBO
I
C
R
ӨJA
R
ӨJC
P
T
T
J
, T
stg
2N3498
2N3499
100
100
6.0
500
175
30
1.0
5.0
2N3500
2N3501
150
150
6.0
300
Unit
V
V
V
mA
o
o
C/W
C/W
W
°C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Operating & Storage Junction Temperature Range
Notes:
1. See
figure 1.
2. See
figure 2.
-65 to +200
T4-LDS-0056, Rev. 3 (121220)
©2012 Microsemi Corporation
Page 1 of 8
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