LX5501A
TM
®
InGAP HBT Gain Block
P
RODUCTION
D
ATA
S
HEET
DESCRIPTION
KEY FEATURES
Advanced InGaP HBT
DC to 6 GHz Operation
Single Supply
Low Idle Current (10 - 35 mA)
Small Signal Gain ~ 11 dB at 6
GHz
P1dB ~ 11 dBm at 6 GHz
SOT-23 Package
This general-purpose amplifier is a
low cost, broadband RFIC manu-
factured with an InGaP/GaAs Hetero-
junction Bipolar Transistor (HBT)
process (MOCVD).
Designed as an easily cascadable 50-
ohm internally matched gain block, the
LX5501A can be used for IF and RF
amplification in wireless / wired voice
and data communication products as
well as in broadband test equipment
operating up to 6 GHz.
The amplifier is available in a plastic
5-lead SOT-23 package.
WWW .
Microsemi
.C
OM
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPLICATIONS
PA driver for WLAN and
Cordless Phones.
VCO buffer.
Low Current, High Gain
Cascaded Amplifiers.
PRODUCT HIGHLIGHT
C4
C3
•
•
•
Fully characterized for 5v operation (with external
bias resistor).
Input and output matched to 50 ohms for ease of
cascading.
Cascaded gain blocks can be individually biased
for the lowest supply current.
L1
VCC
Rext
C1
3
C2
IN OUT
LX5501A
5
1
4
2
LX5501A
LX5501A
PACKAGE ORDER INFO
T
A
(°C)
-40 to +85°C
SE
Plastic SOT-23
5 pin
LX5501A-ISE
Note: Available in Tape & Reel. Append the letters “TR” to the part
number. (i.e. LX5501A-ISETR)
Copyright
©
2004
Rev. 1.0, 2004-07-02
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
LX5501A
TM
®
InGAP HBT Gain Block
P
RODUCTION
D
ATA
S
HEET
ABSOLUTE MAXIMUM RATINGS
PACKAGE PIN OUT
WWW .
Microsemi
.C
OM
DC Supply Voltage ............................................................................................6V
Collector Current ........................................................................................100mA
RF Input Power........................................................................................... 10dBm
Operating Temperature Range ...........................................................-40 to +85°C
Storage Temperature Range...........................................................-60°C to 150°C
Lead Temperature (Soldering 10 seconds) .................................................. 300°C
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal
.
GND
GND
RF Input
1
2
3
5
RF Output
/ VCC
4
GND
SE P
ACKAGE
(Top View)
FUNCTIONAL PIN DESCRIPTION
Pin No.
1
2
3
4
5
Ground
Ground
RF Input
Ground
RF Output/VCC Supply
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage (with appropriate external resistor)
Quiescent Current (No RF input)
Symbol
VCC
Icq
LX5501A
Min
Typ
Max
3.5
10
6
40
Units
V
mA
Description
ELECTRICAL CHARACTERISTICS
Conditions: +25°C, 5V supply voltage.
Parameter
Small Signal Gain
P1dB Compression
Input Return Loss
Output Return Loss
Isolation
Harmonics
Quiescent Current
Copyright
©
2004
Rev. 1.0, 2004-07-02
E
LECTRICALS
E
LECTRICALS
Symbol
S21
P1dB
S11
S22
S12
Icq
Test Conditions
Frequency = 5.8 GHz
Frequency = 5.8 GHz
Frequency = 2.4-6 GHz
Frequency = 2.4-6 GHz
Frequency = 2.4-6 GHz
Frequency = 5.8 GHz, Pout = 10 dBm
Min
LX5501A
Typ
Max
11.4
11.5
-10
-10
-20
-30
30
Units
dB
dBm
dB
dB
dB
dBC
mA
GENERAL SPECIFICATIONS (FIG 1. TEST CIRCUIT)
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
LX5501A
TM
®
InGAP HBT Gain Block
P
RODUCTION
D
ATA
S
HEET
FIGURE 1: TEST CIRCUIT FOR 1 TO 6 GHZ
WWW .
Microsemi
.C
OM
C4
C3
L1
VCC
Rext
C1
3
C2
IN OUT
LX5501A
5
1
4
2
Component
C1,C2
C3
C4
L1
R
EXT
Value
10pF
10pf
0.1uF
3.3nH
50 ohms
Comment
DC block (0402)
RF decoupling (0402)
LF decoupling (0402)
RF choke (0402)
Bias setting resistor (0402)
A
PPLICATION
A
PPLICATION
Copyright
©
2004
Rev. 1.0, 2004-07-02
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
LX5501A
TM
®
InGAP HBT Gain Block
P
RODUCTION
D
ATA
S
HEET
APPLICATION NOTE
WWW .
Microsemi
.C
OM
D
ESIGN
C
ONSIDERATIONS
The gain block is self-biased by the voltage that is present
on pin 5 (V
BIAS
). Chart 1 shows the quiescent current vs. bias
voltage characteristic. Chart 2 shows device characteristics
when operated with a 5v supply and with different values of
external resistor. Using Chart 2 it is possible to trade-off Gain
and P1dB compression point for supply current.
Supply voltages other than 5v may be accommodated by
adjusting the value of the external resistor to produce the
same quiescent current as the 5v case. To calculate the
resistor required for a different supply voltage use the
following formula:
R
EXT
(V1)=R
EXT
(5V)• (V1-V
BIAS
) (5-V
BIAS
)
Where V
BIAS
is the Pin 5 bias voltage obtained from
Chart 1and V1 is the desired supply voltage.
TYPCAL QUIESCENT CURRENT VS. PIN 5
BIAS VOLTAGE @ 25
°
C
70
TYPCAL P1DB, GAIN AND IC VS. R
EXT
@ 25
°
C
14
12
35
30
25
20
15
10
5
0
25
75
125
175
Icq, Quiescent Current - mA
50
40
30
20
10
0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
Icq
10
8
6
4
2
0
Gain
Ic
P 1dB
Pin 5 Bias Voltage - Volts
Rext - ohm s
Frequency = 5.8GHz, V
CC
= 5V
TYPCAL S-PARAMETRS @ 25
°
C
18
16
14
12
S11
S22
S12
S21
-5
0
TYPCAL 2.4 GHZ CHARACTERISTICS @ 25
°
C
20
15
P1dB = 12.0
50
45
-10
-15
-20
-25
-30
Pout, Gain - dBm/dB
S11, S12, S22 - dB
40
35
30
S21 - dB
10
5
0
-5
dBm
10
8
6
4
2
0
2
25
20
P 1dB
P o ut
Gain
Ic
15
10
5
0
-25
-20
-15
-10
-5
0
5
Ic, Supply Current - mA
Ic, Supply Current - mA
60
Gain, P1dB - dB/dBm
A
PPLICATIONS
A
PPLICATIONS
-10
3
Frequency - GHz
V
CC
= 5V, R
EXT
= 50Ω
4
5
6
Pin - dBm
V
CC
= 5V, R
EXT
= 50Ω
Copyright
©
2004
Rev. 1.0, 2004-07-02
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 4
LX5501A
TM
®
InGAP HBT Gain Block
P
RODUCTION
D
ATA
S
HEET
TYPCAL 5.8 GHZ CHARACTERISTICS @ 25
°
C
15
P1dB = 11.5
TYPICAL SUPPLY CURRENT VARIATION
OVER –40 TO +85
°
C AMBIENT
45
40
WWW .
Microsemi
.C
OM
50
45
dBm
Ic, Supply Current - mA
10
Supply Current - mA
Pout, Gain - dBm/dB
40
35
30
35
30
25
20
15
10
5
0
-20
-15
-10
-5
0
5
10
15
-40 deg C
+25 deg C
+85 deg C
5
0
-5
P 1dB
P o ut
Gain
Ic
-25
-20
-15
-10
-5
0
5
25
20
15
10
5
0
-10
-15
Pin - dBm
Frequency = 5.8GHz, V
CC
= 5V. R
EXT
= 50Ω
Pin - dBm
V
CC
= 5V, R
EXT
= 50Ω
TYPCAL GAIN VARIATION OVER –40 TO
+85
°
C AMBIENT
14
TYPCAL P1DB VARIATION OVER –40 TO
+85
°
C AMBIENT
12
12
10
10
P1dB - dBm
-40 deg C
+25 deg C
+85 deg C
Gain - dB
8
6
4
2
0
-20
8
6
4
2
0
P 1dB
-15
-10
-5
0
5
10
15
-50
0
50
100
Pin - dBm
Frequency = 5.8GHz, V
CC
= 5V, R
EXT
= 50Ω
Am bient Tem perature - deg C
Frequency = 5.8GHz, V
CC
= 5V, R
EXT
= 50Ω
C
HARTS
C
HARTS
Copyright
©
2004
Rev. 1.0, 2004-07-02
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 5
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