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LX5506BLQ-TR

Description
Wide Band Medium Power Amplifier, 4000MHz Min, 6000MHz Max, 3 X 3 MM, LEAD FREE, PLASTIC, MLPQ-16
CategoryWireless rf/communication    Radio frequency and microwave   
File Size628KB,7 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance  
Download Datasheet Parametric View All

LX5506BLQ-TR Overview

Wide Band Medium Power Amplifier, 4000MHz Min, 6000MHz Max, 3 X 3 MM, LEAD FREE, PLASTIC, MLPQ-16

LX5506BLQ-TR Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicrosemi
Reach Compliance Codecompliant
Characteristic impedance50 Ω
structureCOMPONENT
Gain21 dB
Maximum input power (CW)15 dBm
JESD-609 codee3
Maximum operating frequency6000 MHz
Minimum operating frequency4000 MHz
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
RF/Microwave Device TypesWIDE BAND MEDIUM POWER
Terminal surfaceMatte Tin (Sn)
LX5506B
TM
®
InGaP HBT 4 – 6GHz Power Amplifier
P
RODUCTION
D
ATA
S
HEET
DESCRIPTION
KEY FEATURES
Advanced InGaP HBT
Single-Polarity Voltage Supply
EVM ~ 2.5% at Pout=+18dBm,
64QAM/ 54Mbps OFDM (3.3V)
Power Gain ~ 25dB at 5.25GHz
& Pout=+18dBm
Power Gain ~ 21dB at 5.85GHz
& Pout=+18dBm
P1dB ~ +26dBm across 5.15 –
5.85 GHz
Total Current ~ 170mA for
Pout=+18dBm at 5.25GHz
Total Current ~ 200mA for
Pout=+20dBm at 5.25GHz
ACPR ~ -48dBc at 30MHz
Offset at Pout=+18dBm
Integrated Power Detector
Complete On-Chip Input Match
Simple Output Capacitor Match
Small Footprint: 3x3mm2
Low Profile: 0.9mm
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
PRODUCT HIGHLIGHT
O
bs
PACKAGE ORDER INFO
LQ
ol
e
Plastic MLPQ
16-Pin
RoHS Compliant / Pb-free
The LX5506B is a power amplifier
optimized for the FCC Unlicensed
National Information Infrastructure
(U-NII) band, HyperLAN2 and Japan
WLAN applications in the 4.9-5.85
GHz frequency range. The PA is
implemented
as
a
three-stage
monolithic microwave integrated
circuit (MMIC) with active bias, on-
chip input matching and output pre-
matching. It also features an on-chip
output power detector to help reduce
BOM cost and PCB board space for
system implementations. The device is
manufactured with an InGaP/GaAs
Heterojunction Bipolar Transistor
(HBT) IC process (MOCVD).
It
operates with a single positive voltage
te
FCC U-N11 Wireless
IEEE 802.11a
HiperLAN2
supply of 3.3V (nominal), with
+26dBm of P1dB and up to 25dB
power gain in the 5.15 - 5.85GHz
frequency range with a simple output
matching capacitor pair.
LX5506B is available in a 16-pin
3mmx3mm micro-lead package (MLP).
The compact footprint, low profile, and
excellent thermal capability of the MLP
package makes the LX5506B an ideal
solution for broadband, high-gain
power amplifier requirements for IEEE
802.11a, and HiperLAN2 portable
WLAN applications.
WWW .
Microsemi
.C
OM
APPLICATIONS/BENEFITS
LX5506B
LX5506B
LX5506BLQ
Note: Available in Tape & Reel. Append the letters “TR” to the part number.
(i.e. LX5506BLQ-TR)
This device is classified as ESD Level 0 in accordance with MIL-STD-883,
Method 3015 (HBM) testing. Appropriate ESD procedures should be
observed when handling this device.
Copyright
©
2003
Rev. 1.0b, 2005-03-02
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
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