DISCRETE SEMICONDUCTORS
DATA SHEET
BYC5B-600
Rectifier diode
ultrafast, low switching loss
Product
specification
March 2001
1;3
Semiconductors
Product specification
Rectifier diode
ultrafast, low switching loss
FEATURES
• Extremely fast switching
• Low reverse recovery current
• Low thermal resistance
• Reduces switching losses in
associated MOSFET
BYC5B-600
SYMBOL
QUICK REFERENCE DATA
V
R
= 600 V
V
F
≤
1.75 V
I
F(AV)
= 5 A
t
rr
= 19 ns (typ)
k
tab
a
3
APPLICATIONS
• Active power factor correction
• Half-bridge lighting ballasts
• Half-bridge/ full-bridge switched
mode power supplies.
The BYC5B-600 is supplied in the
SOT404 surface mounting
package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
no connection
cathode
1
anode
SOT404
tab
2
cathode
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
PARAMETER
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average forward current
CONDITIONS
MIN.
-
-
-
-
-
-
-
-40
-
MAX.
600
600
500
5
10
40
44
150
150
UNIT
V
V
V
A
A
A
A
˚C
˚C
T
stg
T
j
T
mb
≤
110 ˚C
δ
= 0.5; with reapplied V
RRM(max)
;
T
mb
≤
89 ˚C
Repetitive peak forward current
δ
= 0.5; with reapplied V
RRM(max)
;
T
mb
≤
89 ˚C
Non-repetitive peak forward
t = 10 ms
current.
t = 8.3 ms
sinusoidal; T
j
= 150˚C prior to surge
with reapplied V
RWM(max)
Storage temperature
Operating junction temperature
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
minimum footprint, FR4 board
-
TYP.
-
50
MAX.
2.5
-
UNIT
K/W
K/W
1
it is not possible to make connection to pin 2 of the SOT404 package
March 2001
1
Rev 1.400
1;3
Semiconductors
Product specification
Rectifier diode
ultrafast, low switching loss
ELECTRICAL CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
t
rr
t
rr
t
rr
I
rrm
I
rrm
V
fr
PARAMETER
Forward voltage
Reverse current
Reverse recovery time
Reverse recovery time
Reverse recovery time
Peak reverse recovery current
Peak reverse recovery current
Forward recovery voltage
CONDITIONS
I
F
= 5 A; T
j
= 150˚C
I
F
= 10 A; T
j
= 150˚C
I
F
= 5 A;
V
R
= 600 V
V
R
= 500 V; T
j
= 100 ˚C
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 50 A/μs
I
F
= 5 A; V
R
= 400 V;
dI
F
/dt = 500 A/μs
I
F
= 5 A; V
R
= 400 V;
dI
F
/dt = 500 A/μs; T
j
= 100˚C
I
F
= 5 A; V
R
= 400 V;
dI
F
/dt = 50 A/μs; T
j
= 125˚C
I
F
= 5 A; V
R
= 400 V;
dI
F
/dt = 500 A/μs; T
j
= 125˚C
I
F
= 10 A; dI
F
/dt = 100 A/μs
MIN.
-
-
-
-
-
-
-
-
-
-
-
TYP.
1.4
1.75
2.0
9
0.9
30
19
25
0.7
8
9
BYC5B-600
MAX.
1.75
2.2
2.9
100
3.0
50
-
30
3
11
11
UNIT
V
V
V
μA
mA
ns
ns
ns
A
A
V
IL
Vin
150 uH
typ
ID
Vo = 400 V d.c.
OUTPUT DIODE
Vin Vin = 400 V d.c.
IR IF
inductive load
IL
500 V MOSFET
Fig.1. Typical application, output rectifier in boost
converter power factor correction circuit. Continuous
conduction mode, where the transistor turns on whilst
forward current is still flowing in the diode.
Fig.2. Typical application, freewheeling diode in half
bridge converter. Continuous conduction mode, where
each transistor turns on whilst forward current is still
flowing in the other bridge leg diode.
March 2001
2
Rev 1.400
1;3
Semiconductors
Product specification
Rectifier diode
ultrafast, low switching loss
BYC5B-600
15
Forward dissipation, PF (W)
Vo = 1.3 V
Rs = 0.09 Ohms
BYC5-600
Tmb(max) C
112.5
D = 1.0
ID
dIF/dt
Irrm
ID = IL
losses due to
diode reverse recovery
0.5
10
0.2
0.1
5
t
p
t
p
T
t
125
time
I
D=
137.5
VD
T
0
0
1
2
3
4
5
6
Average forward current, IF(AV) (A)
7
150
8
Fig.3. Maximum forward dissipation as a function of
average forward current; rectangular current
waveform where I
F(AV)
=I
F(RMS)
x
√D.
Diode reverse recovery switching losses, Pdsw (W)
f = 20 kHz
Tj = 125 C
VR = 400 V
Fig.6. Origin of switching losses in transistor due to
diode reverse recovery.
0.2
100
Reverse recovery time, trr (ns)
BYC5-600
0.15
10 A
7.5 A
7.5 A
0.1
10 A
IF = 5 A
IF = 5 A
0.05
BYC5-600
0
100
Tj = 125 C
VR = 400 V
10
100
Rate of change of current, dIF/dt (A/us)
1000
Rate of change of current, dIF/dt (A/us)
1000
Fig.4. Typical reverse recovery switching losses in
diode, as a function of rate of change of current dI
F
/dt.
Fig.7. Typical reverse recovery time t
rr
, as a function
of rate of change of current dI
F
/dt.
Transistor losses due to diode reverse recovery, Ptsw (W)
f = 20 kHz
Tj = 125 C
4 VR = 400 V
10 A
5
3
2
1
BYC5-600
0
100
Rate of change of current, dIF/dt (A/us)
1000
7.5 A
100
Peak reverse recovery current, Irrm (A)
BYC5-600
10
IF = 5 A
10 A
IF = 5 A
Tj = 125 C
VR = 400 V
Rate of change of current, dIF/dt (A/us)
1000
1
100
Fig.5. Typical switching losses in transistor due to
reverse recovery of diode, as a function of of change
of current dI
F
/dt.
Fig.8. Typical peak reverse recovery current, I
rrm
as a
function of rate of change of current dI
F
/dt.
March 2001
3
Rev 1.400
1;3
Semiconductors
Product specification
Rectifier diode
ultrafast, low switching loss
BYC5B-600
I
dI
F
dt
F
10
Forward current, IF (A)
Tj = 25 C
Tj = 150 C
BYC5-600
8
t
rr
6
time
4
typ
max
Q
I
I
s
10%
100%
2
R
rrm
0
0
1
2
Forward voltage, VF (V)
3
4
Fig.9. Definition of reverse recovery parameters t
rr
, I
rrm
Fig.12. Typical and maximum forward characteristic
I
F
= f(V
F
); T
j
= 25˚C and 150˚C.
20
Peak forward recovery voltage, Vfr (V)
Tj = 25 C
IF = 10 A
BYC5-600
100mA
Reverse leakage current (A)
BYC5-600
10mA
15
typ
1mA
Tj = 125 C
100 C
75 C
100uA
50 C
10
5
10uA
25 C
0
0
50
100
150
Rate of change of current, dIF/dt (A/ s)
200
1uA
0
100
200
300
400
Reverse voltage (V)
500
600
Fig.10. Typical forward recovery voltage, V
fr
as a
function of rate of change of current dI
F
/dt.
Fig.13. Typical reverse leakage current as a function
of reverse voltage. I
R
= f(V
R
); parameter T
j
Transient thermal impedance, Zth j-mb (K/W)
I
F
10
1
time
VF
0.1
0.01
P
D
t
p
D=
V
VF
time
t
p
T
t
fr
0.001
1us
T
10us
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BYV29
10s
Fig.11. Definition of forward recovery voltage V
fr
Fig.14. Maximum thermal impedance Z
th j-mb
as a
function of pulse width.
March 2001
4
Rev 1.400
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