BZT52H series
Voltage regulator diodes
Rev. 4 — 21 January 2019
Product data sheet
1. Product profile
1.1. General description
General-purpose Zener diodes in an SOD123F small and flat lead Surface-Mounted Device (SMD)
plastic package.
1.2. Features and benefits
•
•
•
•
Total power dissipation: ≤ 830 mW
Wide working voltage range: nominal 2.4 V to 75 V (E24 range)
Small plastic package suitable for surface-mounted design
AEC-Q101 qualified
1.3. Applications
•
General regulation functions
1.4. Quick reference data
Table 1. Quick reference data
Symbol Parameter
V
F
P
tot
forward voltage
total power dissipation
Conditions
I
F
= 10 mA
T
amb
≤ 25 °C
Min
[1]
-
[2]
-
[3]
-
[1]
[2]
[3]
Typ
-
-
-
Max
0.9
375
830
Unit
V
mW
mW
Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
2. Pinning information
Table 2. Pinning
Pin
Description
1
2
[1]
Simplified outline
[1]
1
2
Graphic symbol
K
A
006aaa152
cathode
anode
The marking bar indicates the cathode.
Nexperia
BZT52H series
Voltage regulator diodes
3. Ordering information
Table 3. Ordering information
Type number
BZT52H-B2V4 to
BZT52H-C75
[1]
[1]
Package
Name
-
Description
plastic surface-mounted package; 2 leads
Version
SOD123F
The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.
4. Marking
Table 4. Marking codes
Type number
Marking
code
BZT52H-B2V4
BZT52H-B2V7
BZT52H-B3V0
BZT52H-B3V3
BZT52H-B3V6
BZT52H-B3V9
BZT52H-B4V3
BZT52H-B4V7
BZT52H-B5V1
BZT52H-B5V6
BZT52H-B6V2
BZT52H-B6V8
BZT52H-B7V5
BZT52H-B8V2
BZT52H-B9V1
BZT52H-B10
BZT52H-B11
BZT52H-B12
BZT52H-B13
DC
DD
DE
DF
DG
DH
DJ
DK
DL
DM
DN
DP
DQ
DR
DS
DT
DU
DV
DW
Type number
BZT52H-B15
BZT52H-B16
BZT52H-B18
BZT52H-B20
BZT52H-B22
BZT52H-B24
BZT52H-B27
BZT52H-B30
BZT52H-B33
BZT52H-B36
BZT52H-B39
BZT52H-B43
BZT52H-B47
BZT52H-B51
BZT52H-B56
BZT52H-B62
BZT52H-B68
BZT52H-B75
-
Marking
code
DX
DY
DZ
E1
E2
E3
E4
E5
E6
E7
E8
E9
EA
EB
EC
ED
EE
EF
-
Type number
BZT52H-C2V4
BZT52H-C2V7
BZT52H-C3V0
BZT52H-C3V3
BZT52H-C3V6
BZT52H-C3V9
BZT52H-C4V3
BZT52H-C4V7
BZT52H-C5V1
BZT52H-C5V6
BZT52H-C6V2
BZT52H-C6V8
BZT52H-C7V5
BZT52H-C8V2
BZT52H-C9V1
BZT52H-C10
BZT52H-C11
BZT52H-C12
BZT52H-C13
Marking
code
B3
B4
B5
B6
B7
B8
B9
BA
BB
BC
BD
BE
BF
BG
BH
BJ
BK
BL
BM
Type number
BZT52H-C15
BZT52H-C16
BZT52H-C18
BZT52H-C20
BZT52H-C22
BZT52H-C24
BZT52H-C27
BZT52H-C30
BZT52H-C33
BZT52H-C36
BZT52H-C39
BZT52H-C43
BZT52H-C47
BZT52H-C51
BZT52H-C56
BZT52H-C62
BZT52H-C68
BZT52H-C75
-
Marking
code
BN
BP
BQ
BR
BS
BT
BU
BV
BW
BX
BY
BZ
C1
C2
C3
C4
C5
C6
-
BZT52H_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2019. All rights reserved
Product data sheet
Rev. 4 — 21 January 2019
2 / 12
Nexperia
BZT52H series
Voltage regulator diodes
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
F
I
ZSM
Parameter
forward current
non-repetitive peak
reverse current
non-repetitive peak
reverse power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
T
amb
≤ 25 °C
Conditions
Min
-
-
Max
250
see
Table 8,9
and 10
40
375
830
150
+150
+150
W
mW
mW
°C
°C
°C
Unit
mA
P
ZSM
P
tot
T
j
T
amb
T
stg
[1]
[2]
[3]
[1]
-
[2]
-
[3]
-
-
-65
-65
t
p
= 100 μs; square wave; T
j
= 25 °C prior to surge.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter
R
th(j-a)
R
th(j-sp)
[1]
[2]
[3]
Conditions
in free air
Min
[1]
-
[2]
-
[3]
-
Typ
-
-
-
Max
330
150
70
Unit
K/W
K/W
K/W
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
Soldering point of cathode tab.
BZT52H_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2019. All rights reserved
Product data sheet
Rev. 4 — 21 January 2019
3 / 12
Nexperia
BZT52H series
Voltage regulator diodes
7. Characteristics
Table 7. Characteristics
T
j
= 25 °C unless otherwise specified.
Symbol
V
F
[1]
Parameter
forward voltage
Conditions
I
F
= 10 mA
Min
[1]
-
Typ
-
Max
0.9
Unit
V
Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
Table 8. Characteristics per type; BZT52H-B2V4 to BZT52H-C24
T
j
= 25 °C unless otherwise specified.
BZT52H Sel
-xxx
Working
voltage
V
Z
(V);
I
Z
= 5 mA
Min
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
2.35
2.2
2.65
2.5
2.94
2.8
3.23
3.1
3.53
3.4
3.82
3.7
4.21
4.0
4.61
4.4
5.0
4.8
5.49
5.2
6.08
5.8
6.66
6.4
7.35
7.0
8.04
7.7
8.92
8.5
Max
2.45
2.6
2.75
2.9
3.06
3.2
3.37
3.5
3.67
3.8
3.98
4.1
4.39
4.6
4.79
5.0
5.2
5.4
5.71
6.0
6.32
6.6
6.94
7.2
7.65
7.9
8.36
8.7
9.28
9.6
100
10
0.5
6
3.8
7.0
150
3.0
80
10
0.7
5
3.2
6.2
150
4.0
80
10
1
5
2.5
5.3
150
4.0
80
8
2
4
1.2
4.5
200
6.0
150
10
3
4
0.4
3.7
200
6.0
400
40
1
2
-2.0
2.5
300
6.0
480
60
2
2
-2.7
1.2
300
6.0
500
78
3
2
-3.5
0.2
300
6.0
500
95
3
1
-3.5
0.0
450
6.0
500
95
3
1
-3.5
0.0
450
6.0
500
95
5
1
-3.5
0.0
450
6.0
500
95
5
1
-3.5
0.0
450
6.0
500
95
10
1
-3.5
0.0
450
6.0
500
83
20
1
-3.5
0.0
450
6.0
Maximum differential
resistance r
dif
(Ω)
Reverse
Temperature
current I
R
(μA) coefficient
S
Z
(mV/K);
I
Z
= 5 mA
Max
50
V
R
(V)
1
Min
-3.5
Max
0.0
Diode
Non-repetitive
capacitance peak reverse
C
d
(pF)
[1]
current
I
ZSM
(A)
[2]
Max
450
Max
6.0
I
Z
= 1 mA
400
I
Z
= 5 mA
85
BZT52H_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2019. All rights reserved
Product data sheet
Rev. 4 — 21 January 2019
4 / 12
Nexperia
BZT52H series
Voltage regulator diodes
Working
voltage
V
Z
(V);
I
Z
= 5 mA
Min
Max
10.2
10.6
11.2
11.6
12.2
12.7
13.3
14.1
15.3
15.6
16.3
17.1
18.4
19.1
20.4
21.2
22.4
23.3
24.5
25.6
220
30
0.05
16.8
18.4
22.0
55
1.25
220
25
0.05
15.4
16.4
20.0
60
1.25
220
20
0.05
14
14.4
18.0
60
1.5
170
20
0.05
12.6
12.4
16.0
70
1.5
170
20
0.05
11.2
10.4
14.0
75
1.5
110
15
0.05
10.5
9.2
13.0
75
2.0
110
10
0.1
8
7.0
11.0
80
2.5
90
10
0.1
8
6.0
10.0
85
2.5
70
10
0.1
8
5.4
9.0
85
2.5
9.8
9.4
10.8
10.4
11.8
11.4
12.7
12.4
14.7
13.8
15.7
15.3
17.6
16.8
19.6
18.8
21.6
20.8
23.5
22.8
Maximum differential
resistance r
dif
(Ω)
Reverse
Temperature
current I
R
(μA) coefficient
S
Z
(mV/K);
I
Z
= 5 mA
Max
0.2
V
R
(V)
7
Min
4.5
Max
8.0
Diode
Non-repetitive
capacitance peak reverse
C
d
(pF)
[1]
current
I
ZSM
(A)
[2]
Max
90
Max
3.0
BZT52H Sel
-xxx
I
Z
= 1 mA
70
I
Z
= 5 mA
10
10
11
12
13
15
16
18
20
22
24
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
[1]
[2]
f = 1 MHz; V
R
= 0 V.
t
p
= 100 μs; T
amb
= 25 °C.
Table 9. Characteristics per type; BZT52H-B27 to BZT52H-C51
T
j
= 25 °C unless otherwise specified.
BZT52H Sel
-xxx
Working
voltage
V
Z
(V);
I
Z
= 2 mA
Min
27
30
33
36
39
43
B
C
B
C
B
C
B
C
B
C
B
C
26.5
25.1
29.4
28.0
32.3
31.0
35.3
34.0
38.2
37.0
42.1
40.0
Max
27.5
28.9
30.6
32.0
33.7
35.0
36.7
38.0
39.8
41.0
43.9
46.0
325
80
0.05
30.1
37.6
46.6
40
0.6
300
75
0.05
27.3
33.4
41.2
45
0.7
250
60
0.05
25.2
30.4
37.4
45
0.8
250
40
0.05
23.1
27.4
33.4
45
0.9
250
40
0.05
21
24.4
29.4
50
1.0
Maximum differential
resistance r
dif
(Ω)
Reverse
Temperature
current I
R
(μA) coefficient
S
Z
(mV/K);
I
Z
= 5 mA
Max
0.05
V
R
(V)
18.9
Min
21.4
Max
25.3
Diode
Non-repetitive
capacitance peak reverse
C
d
(pF)
[1]
current
I
ZSM
(A)
[2]
Max
50
Max
1.0
I
Z
= 1 mA
250
I
Z
= 5 mA
40
BZT52H_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2019. All rights reserved
Product data sheet
Rev. 4 — 21 January 2019
5 / 12
京公网安备 11010802033920号
EEWORLD
