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MXSMLG75CATR

Description
3000W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size175KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

MXSMLG75CATR Overview

3000W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB, PLASTIC PACKAGE-2

MXSMLG75CATR Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeDO-215AB
package instructionR-PDSO-G2
Contacts2
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
Maximum breakdown voltage92.1 V
Minimum breakdown voltage83.3 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-215AB
JESD-30 codeR-PDSO-G2
JESD-609 codee0
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation3000 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum power dissipation1.61 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage75 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
SURFACE MOUNT 3000 Watt
Transient Voltage Suppressor
- High Reliability controlled devices
- Unidirectional (A) and Bidirectional (CA) construction
- Available in both J-bend and Gull-wing terminations
- Selections for 5.0 to 170 V standoff voltages (V
WM
)
LEVELS
M, MA, MX, MXL
DEVICES
MSMLJ5.0A thru MSMLJ170CA, e3
and MSMLG5.0A thru MSMLG170CA, e3
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes specify
various screening and conformance inspection options based on MIL-PRF-19500. Refer to
MicroNote 129
for more details on the screening options.
Axial-lead equivalent packages for thru-hole mounting available as M5KP5.0A to M5KP110CA with 5000 W
rating, (consult factory for other surface mount options)
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS compliant devices available by adding an “e3” suffix
3σ lot norm screening performed on Standby Current I
D
Refer to table below
for dimensions
APPLICATIONS / BENEFITS
Suppresses transients up to 3000 watts @ 10/1000 µs
Protection from switching transients and induced RF
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
o
Class 1 & 2: MSML5.0A to MSML 170ACA
o
Class 3: MSML5.0A to MSML150CA
o
Class 4: MSML5.0A to MSML75CA
Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:
o
Class 1: MSML5.0A to MSML170CA
o
Class 2: MSML5.0A to MSML90CA
o
Class 3: MSML5.0A to MSML48CA
o
Class 4: MSML5.0A to MSML24CA
Secondary lightning protection per IEC61000-4-5 with 2 Ohms source impedance:
o
Class 2: MSML5.0A to MSML43CA
o
Class 3: MSML5.0A to MSML22CA
o
Class 4: MSML5.0A to MSML10CA
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 ºC: 3000 watts at 10/1000
μs
(also see Figures 1,2, and 3) with
impulse repetition rate (duty factor) of 0.01 % or less
t
clamping
(0 V to V
BR
min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional
Operating and Storage temperature: -65 ºC to +150 ºC
Thermal resistance: 17.5 ºC/W junction to lead, or 77.5 ºC/W junction to ambient when mounted on FR4
PC board (1 oz Cu) with recommended footprint Steady-State Power dissipation: 6 watts at TL = 45 ºC, or
1.61 watts at TA = 25 ºC when mounted on FR4 PC board with recommended footprint (see page 2)
Forward Surge at 25 ºC: 200 Amps peak impulse of 8.3 ms half-sine wave (unidirectional only)
Solder temperatures: 260 ºC for 10 s (maximum)
RF01003 Rev B, Sept 2011
High Reliability Product Group
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