AP9430GYT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Small Size & Lower Profile
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
3
I
D
D
30V
4.5mΩ
23A
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The PMPAK
®
3 x 3 package is special for DC-DC converters
application and lower 1.0mm profile with backside heat sink.
S
S
D
D
D
S
G
®
PMPAK 3 x 3
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
3
, V
GS
@ 10V
Drain Current , V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
3
.
Rating
30
+20
23
18.4
80
3.57
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
3
Value
4
35
Unit
℃/W
℃/W
1
201410143
Data and specifications subject to change without notice
AP9430GYT-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=12A
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=20A
V
DS
=24V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=20A
V
DS
=15V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Min.
30
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
33
-
-
33
7
21
18
15
60
25
400
380
1.5
Max. Units
-
4.5
7
3
-
10
+100
53
-
-
-
-
-
-
-
-
-
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
2700 4320
.
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=2.9A, V
GS
=0V
I
S
=10A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
33
30
Max. Units
1.2
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board, t <10sec ; 85
o
C/W at steady state.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9430GYT-HF
80
80
T
A
=25 C
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
60
10V
7.0V
6.0V
5.0V
V
G
= 4.0V
T
A
= 150
o
C
60
10V
7.0V
6.0V
5.0V
V
G
= 4.0V
40
40
20
20
0
0
0.4
0.8
1.2
1.6
2
0
0
0.4
0.8
1.2
1.6
2
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
6
2.0
I
D
= 12 A
T
A
=25
℃
5.2
I
D
=20A
V
G
=10V
1.6
R
DS(ON)
(m
Ω
)
4.4
Normalized R
DS(ON)
.
1.2
3.6
0.8
2.8
0.4
2
4
6
8
10
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
20
I
D
=250uA
16
1.2
12
T
j
=150 C
8
o
T
j
=25 C
o
Normalized V
GS(th)
I
S
(A)
0.8
0.4
4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9430GYT-HF
10
4000
f=1.0MHz
I
D
= 20 A
V
DS
=15V
V
GS
, Gate to Source Voltage (V)
8
3000
6
C (pF)
C
iss
2000
4
1000
2
C
oss
C
rss
0
0
10
20
30
40
50
60
0
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
100us
10
Normalized Thermal Response (R
thja
)
Operation in this area
limited by R
DS(ON)
Duty factor=0.5
0.2
1ms
I
D
(A)
10ms
1
0.1
0.1
0.05
100ms
0.1
.
0.02
0.01
P
DM
0.01
t
T
Single Pulse
1s
T
A
=25
o
C
Single Pulse
DC
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thia
=85
℃/W
0.01
0.01
0.1
1
10
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP9430YT-HF
MARKING INFORMATION
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code : YT
9430GYT
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5
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