Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, DO-35,
| Parameter Name | Attribute value |
| Maker | Surge Components |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| JEDEC-95 code | DO-35 |
| JESD-30 code | O-LALF-W2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 125 °C |
| Maximum output current | 0.2 A |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Maximum power dissipation | 0.2 W |
| Maximum repetitive peak reverse voltage | 30 V |
| Maximum reverse recovery time | 0.005 µs |
| surface mount | NO |
| technology | SCHOTTKY |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| BAT42 | BAT43 | |
|---|---|---|
| Description | Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, DO-35, | Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, DO-35, |
| Maker | Surge Components | Surge Components |
| Reach Compliance Code | compliant | compliant |
| ECCN code | EAR99 | EAR99 |
| Shell connection | ISOLATED | ISOLATED |
| Configuration | SINGLE | SINGLE |
| Diode component materials | SILICON | SILICON |
| Diode type | RECTIFIER DIODE | RECTIFIER DIODE |
| JEDEC-95 code | DO-35 | DO-35 |
| JESD-30 code | O-LALF-W2 | O-LALF-W2 |
| Number of components | 1 | 1 |
| Number of terminals | 2 | 2 |
| Maximum operating temperature | 125 °C | 125 °C |
| Maximum output current | 0.2 A | 0.2 A |
| Package body material | GLASS | GLASS |
| Package shape | ROUND | ROUND |
| Package form | LONG FORM | LONG FORM |
| Maximum power dissipation | 0.2 W | 0.2 W |
| Maximum repetitive peak reverse voltage | 30 V | 30 V |
| Maximum reverse recovery time | 0.005 µs | 0.005 µs |
| surface mount | NO | NO |
| technology | SCHOTTKY | SCHOTTKY |
| Terminal form | WIRE | WIRE |
| Terminal location | AXIAL | AXIAL |