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IRFF431

Description
TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,2.75A I(D),TO-205AF
CategoryDiscrete semiconductor    The transistor   
File Size150KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

IRFF431 Overview

TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,2.75A I(D),TO-205AF

IRFF431 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Reach Compliance Codenot_compliant
ConfigurationSingle
Maximum drain current (Abs) (ID)2.75 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)25 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)

IRFF431 Related Products

IRFF431 IRFF433 IRFF432
Description TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,2.75A I(D),TO-205AF TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,2.25A I(D),TO-205AF TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,2.25A I(D),TO-205AF
Is it Rohs certified? incompatible incompatible incompatible
Reach Compliance Code not_compliant not_compliant _compli
Configuration Single Single Single
Maximum drain current (Abs) (ID) 2.75 A 2.25 A 2.25 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e0 e0 e0
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 25 W 25 W 25 W
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Maker Renesas Electronics Corporation - Renesas Electronics Corporation
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