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SS16

Description
SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size261KB,2 Pages
ManufacturerDIOTECH
Websitehttp://www.kdiode.com/
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SIGNAL DIODE

SS16 Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeSignal diode
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 100 Volts
Forward Current - 1.0 Ampere
SS12 THRU SS100
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Metal silicon junction,majority carrier conduction
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
SMA(DO-214AC)
.062(1.60)
.055(1.40)
.114(2.90)
.098(2.50)
.181(4.60)
.157(4.00)
.012(.305)
.006(.152)
MECHANICAL DATA
Case
: JEDEC DO-214AC molded plastic body
Terminals
: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity
: Color band denotes cathode end
Mounting Position
: Any
Weight
:0.003 ounce, 0.093 grams
0.004 ounce, 0.111 grams SMA(H)
.103(2.62)
.079(2.00)
.060(1.52)
.030(0.76)
.008(.203)
.002(.051)
.208(5.28)
.188(4.80)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
(see fig.1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25℃
at rated DC blocking voltage
T
A
=100℃
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction temperature range
Storage temperature range
SYMBOLS
SS12
SS13
SS14
SS15
SS16
SS18 SS100
UNITS
V
V
V
A
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
C
J
R
JA
T
J
,
T
STG
20
14
20
30
21
30
40
28
40
50
35
50
1.0
40.0
60
42
60
80
56
80
100
70
100
0.50
0.5
6.0
110
-65 to +125
0.70
5.0
90
88.0
-65 to +150
-65 to +150
0.85
V
mA
pF
℃/W
Note:
1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2
(5.0x5.0mm) copper pad areas

SS16 Related Products

SS16 SS12 SS14 SS15 SS100 SS13 SS18
Description SIGNAL DIODE 1 A, 20 V, SILICON, SIGNAL DIODE, DO-214AC SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC RECTIFIER DIODE, DO-214AC SIGNAL DIODE 1 A, 80 V, SILICON, SIGNAL DIODE, DO-214AC
state ACTIVE ACTIVE ACTIVE CONSULT MFR - ACTIVE -
Diode type Signal diode Signal diode Signal diode Signal diode - Signal diode -

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