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US2M

Description
2 A, 1000 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size280KB,2 Pages
ManufacturerDIOTECH
Websitehttp://www.kdiode.com/
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US2M Overview

2 A, 1000 V, SILICON, RECTIFIER DIODE

Reverse Voltage - 50 to 1000 Volts
SURFACE MOUNT ULTRA FAST RECTIFIER
US2A THRU US2M
Forward Current - 2.0 Ampere
FEATURES
Ultra fast switching for high efficiency
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
.083(2.11)
.075(1.91)
SMB ( DO-214AA )
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
.155(3.94)
.130(3.30)
.185(4.70)
.160(4.06)
.012(.305)
.006(.152)
.096(2.44)
.084(2.13)
.060(1.52)
.030(0.76)
.008(.203)
.002(.051)
MECHANICAL DATA
Case
: JEDEC DO-214AA molded plastic body
Terminals
: Solder plated , solderable per MIL-STD-750,
Method 2026
Polarity
: Color band denotes cathode end
Mounting Position
: Any
Weight
:0.005 ounce, 0.138 grams
.220(5.59)
.200(5.08)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=90
C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 2.0A
Maximum DC reverse current
T
A
=25
C
at rated DC blocking voltage
T
A
=100
C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
SYMBOLS
US2A US2B US2D US2G US2J
US2K US2M
UNITS
V
V
V
A
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
JA
T
J
,
T
STG
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30.0
600
420
600
800
560
800
1000
700
1000
1.0
1.3
5.0
100.0
50
20.0
50.0
-65 to +150
1.7
V
µA
75
ns
pF
C/W
C
Note:
1.Reverse recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2
(5.0x5.0mm) copper pad areas

US2M Related Products

US2M US2A US2D US2G US2J US2B US2K
Description 2 A, 1000 V, SILICON, RECTIFIER DIODE 2 A, 50 V, SILICON, RECTIFIER DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 100 V, SILICON, RECTIFIER DIODE 2 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AA

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