SILICON NPN TRANSISTOR
BDY24/A/B/C
•
•
•
•
High Power
Hermetic TO-3 Metal Package
Ideally suited for Switching
and Amplifier Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
IB
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Base Current
TC = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
100V
90V
10V
6A
3A
80W
0.45W/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Max.
2.2
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Semelab Limited
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 10265
Issue 1
Page 1 of 3
Website:
http://www.semelab-tt.com
SILICON NPN TRANSISTOR
BDY24/A/B/C
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols
ICEO
ICES
IEBO
V(BR)CEO
(1)
Parameters
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector – Emitter
Breakdown Voltage
Collector – Base Breakdown
Voltage
Test Conditions
VCE = 90V
VCE = 100V
VEB = 10V
IC = 50mA
IC = 3mA
VCE = 4V
IC = 1.0A
VCE = 4V
IC = 2A
IB = 0
VBE = 0
IC = 0
IB = 0
IE = 0
A
B
Min.
Typ
Max.
1.0
1.0
Units
mA
1.0
90
V
100
55
65
90
15
30
75
20
40
82
45
90
100
0.6
1.2
V
-
V(BR)CBO
(1)
hFE
(1)
Static Forward-Current
Transfer Ratio
C
A
B
C
IB = 0.25A
IB = 0.25A
VCE(sat)
VBE(sat)
(1)
(1)
Collector – Emitter
Saturation Voltage
Base – Emitter Saturation
Voltage
IC = 2A
IC = 2A
DYNAMIC CHARACTERISTICS
fT
ton
toff
Transition Frequency
Turn-On Time
Turn-Off Time
VCE = 15V
f = 10MHz
IC = 5A
IC = 5A
IB2 = -1.0A
IC = 0.5A
IB = 1.0A
IB1 = 1.0A
10
0.15
1.2
0.5
2
µs
MHz
Notes
(1) Pulse Width
≤
380us,
δ ≤
2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 10265
Issue 1
Page 2 of 3
SILICON NPN TRANSISTOR
BDY24/A/B/C
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
1.52 (0.06)
3.43 (0.135)
6.35 (0.25)
9.15 (0.36)
38.61 (1.52)
39.12 (1.54)
0.97 (0.060)
1.10 (0.043)
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
TO3 (TO-204AA) METAL PACKAGE
Underside View
Pin 1 - Base
Pin 2 - Emitter
Case - Collector
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 10265
Issue 1
Page 3 of 3
22.23
(0.875)
max.
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