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BDY43

Description
Bipolar Transistors;NPN;5A;300V;TO-3
File Size207KB,2 Pages
ManufacturerInchange Semiconductor
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BDY43 Overview

Bipolar Transistors;NPN;5A;300V;TO-3

BDY43 Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknown
isc
Silicon NPN Power Transistor
BDY43
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 300V(Min.)
·DC
Current Gain-
: h
FE
=20(Min.)@I
C
= 1A
·Collector-Emitter
Saturation Voltage-
: V
CE(sat
)= 1.5V(Max)@ I
C
= 5A
·High
Switching Speed
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Voltage
regulator
·Inverter
·Switching
mode power supply
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
600
600
300
7
5
10
3
60
175
-65~175
UNIT
V
V
V
V
A
A
A
W
isc website
www.iscsemi.com
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isc & iscsemi
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