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BDY46

Description
Bipolar Transistors;NPN;15A;300V;TO-3
File Size208KB,2 Pages
ManufacturerInchange Semiconductor
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BDY46 Overview

Bipolar Transistors;NPN;15A;300V;TO-3

BDY46 Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknown
isc
Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 300V(Min.)
·DC
Current Gain-
: h
FE
=20(Min.)@I
C
= 2A
·Collector-Emitter
Saturation Voltage-
: V
CE(sat
)= 1.5V(Max)@ I
C
= 15A
·High
Switching Speed
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Voltage
regulator
·Inverter
·Switching
mode power supply
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation@T
C
≤45℃
Junction Temperature
Storage Temperature
VALUE
600
600
300
7
15
17
5
95
175
-65~175
UNIT
V
V
V
V
A
A
A
W
BDY46
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.37
1
UNIT
℃/W
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