Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-72
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | CDIL[Continental Device India Pvt. Ltd.] |
| package instruction | CYLINDRICAL, O-MBCY-W4 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.03 A |
| Collector-based maximum capacity | 0.9 pF |
| Collector-emitter maximum voltage | 20 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 36 |
| JEDEC-95 code | TO-72 |
| JESD-30 code | O-MBCY-W4 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 4 |
| Maximum operating temperature | 175 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 0.15 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 260 MHz |
| BF185 | 2SC568 | 2SC2570 | BF180 | BF181 | BF200 | BF182 | BF184 | |
|---|---|---|---|---|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-72 | Small Signal Bipolar Transistor, 0.02A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-72 | RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72 | RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Silicon, NPN, TO-72, METAL, TO-72, 4 PIN | RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Silicon, NPN, TO-72, METAL, TO-72, 4 PIN | Small Signal Bipolar Transistor, 0.02A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-72 | RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Silicon, NPN, TO-72 | Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-72 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| package instruction | CYLINDRICAL, O-MBCY-W4 | CYLINDRICAL, O-MBCY-W4 | CYLINDRICAL, O-MBCY-W4 | CYLINDRICAL, O-MBCY-W4 | CYLINDRICAL, O-MBCY-W4 | CYLINDRICAL, O-MBCY-W4 | CYLINDRICAL, O-MBCY-W4 | CYLINDRICAL, O-MBCY-W4 |
| Reach Compliance Code | compliant | compli | compli | compliant | compliant | compliant | compliant | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 0.03 A | 0.02 A | 0.07 A | 0.02 A | 0.02 A | 0.02 A | 0.02 A | 0.03 A |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| JEDEC-95 code | TO-72 | TO-72 | TO-72 | TO-72 | TO-72 | TO-72 | TO-72 | TO-72 |
| JESD-30 code | O-MBCY-W4 | O-MBCY-W4 | O-MBCY-W4 | O-MBCY-W4 | O-MBCY-W4 | O-MBCY-W4 | O-MBCY-W4 | O-MBCY-W4 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| Package body material | METAL | METAL | METAL | METAL | METAL | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
| Maximum power dissipation(Abs) | 0.15 W | 0.2 W | 0.25 W | 0.15 W | 0.15 W | 0.15 W | 0.15 W | 0.165 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 260 MHz | 200 MHz | 5000 MHz | 675 MHz | 600 MHz | 650 MHz | 650 MHz | 200 MHz |
| Maker | CDIL[Continental Device India Pvt. Ltd.] | - | - | CDIL[Continental Device India Pvt. Ltd.] | CDIL[Continental Device India Pvt. Ltd.] | CDIL[Continental Device India Pvt. Ltd.] | - | CDIL[Continental Device India Pvt. Ltd.] |
| Collector-based maximum capacity | 0.9 pF | 1 pF | 0.9 pF | - | - | - | 0.33 pF | 0.9 pF |
| Collector-emitter maximum voltage | 20 V | 15 V | 12 V | - | - | 20 V | 20 V | 20 V |
| Minimum DC current gain (hFE) | 36 | 30 | 40 | - | 14 | 6 | 10 | 67 |
| Maximum operating temperature | 175 °C | 150 °C | 200 °C | 175 °C | - | 175 °C | 175 °C | - |
| Base Number Matches | - | 1 | 1 | 1 | 1 | 1 | 1 | - |
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