Transistors
2SB0745, 2SB0745A
(2SB745, 2SB745A)
Silicon PNP epitaxial planar type
For low-frequency and low-noise amplification
Complementary to 2SD0661 (2SD661) and 2SD0661A (2SD661A)
(0.4)
Unit: mm
6.9
±0.1
(1.5)
(1.5)
2.5
±0.1
(1.0)
q
q
q
2.0
±0.2
Low noise voltage NV.
High foward current transfer ratio h
FE
.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
(Ta=25˚C)
Ratings
–35
–55
–35
–55
–5
–200
–50
400
150
–55 ~ +150
Unit
V
3.5
±0.1
(1.0)
2.4
±0.2
0.45
±0.05
s
Features
R 0.9
R 0.7
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SB0745
2SB0745A
2SB0745
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
1.0
±0.1
(0.85)
emitter voltage 2SB0745A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
V
mA
mA
mW
˚C
˚C
3
(2.5)
2
(2.5)
1
1:Base
2:Collector
3:Emitter
1.25
±0.05
0.55
±0.1
M-A1 Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
2SB0745
2SB0745A
2SB0745
2SB0745A
(Ta=25˚C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
V
BE
f
T
NV
Conditions
V
CB
= –10V, I
E
= 0
V
CE
= –10V, I
B
= 0
I
C
= –10µA, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CB
= –5V, I
E
= 2mA
I
C
= –100mA, I
B
= –10mA
V
CE
= –1V, I
C
= –100mA
V
CB
= –5V, I
E
= 2mA, f = 200MHz
V
CE
= –10V, I
C
= –1mA, G
V
= 80dB
R
g
= 100kΩ, Function = FLAT
– 0.7
150
150
–35
–55
–35
–55
–5
180
700
– 0.6
–1
V
V
MHz
mV
min
typ
max
–100
–1
Unit
nA
µA
V
V
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise voltage
*
h
FE
Rank classification
R
180 ~ 360
S
260 ~ 520
T
360 ~ 700
SJC00050AED
Rank
h
FE
Note.) The Part numbers in the Parenthesis show
conventional part number.
4.1
±0.2
4.5
±0.1
Publication date: August 2002
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
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(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
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Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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harm the human body.
•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
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2002 JUL
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