IR255SG06HPBF datasheet, PDF - EEWORLD Datasheet

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IR255SG06HPBF: DescriptionSilicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER; CategoryAnalog mixed-signal IC Trigger device; File Size126KB，3 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IR255SG06HPBF Overview

Silicon Controlled Rectifier, 600V V(DRM), 600V V(RRM), 1 Element, 4 INCH, WAFER

IR255SG06HPBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
Parts packaging code	WAFER
package instruction	UNCASED CHIP, O-XUUC-N
Reach Compliance Code	compliant
Configuration	SINGLE
Maximum DC gate trigger current	80 mA
JESD-30 code	O-XUUC-N
Number of components	1
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Off-state repetitive peak voltage	600 V
Repeated peak reverse voltage	600 V
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	40
Trigger device type	SCR

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Preliminary Data Sheet I0211J 12/99

IR255SG..HCB

PHASE CONTROL THYRISTORS

Junction Size:

Wafer Size:

V

RRM

Class:

Passivation Process:

Square 250 mils

4"

600 to 1200 V

Glassivated MESA

Reference IR Packaged Part:

n. a.

Major Ratings and Characteristics

Parameters

V

TM

Maximum On-state Voltage

Units

1.25 V

Test Conditions

T

J

= 25°C, I

T

= 25 A

(1)

V

DRM

/V

RRM

Direct and Reverse Breakdown Voltage

I

GT

V

GT

I

H

I

L

Max. Required DC Gate Current to Trigger

Max. Required DC Gate Voltage to Trigger

Holding Current Range

Maximum Latching Current

600 to 1200 V T

J

= 25°C, I

DRM

/I

RRM

= 100 µA

80 mA

2V

5 to 100 mA

300 mA

T

J

= 25° C, anode supply = 6 V, resistive load

T

J

= 25° C, anode supply = 6 V, resistive load

Anode supply = 6 V, resistive load

(1)

Nitrogen flow on die edge.

Mechanical Characteristics

Nominal Back Metal Composition, Thickness

Nominal Front Metal Composition, Thickness

Chip Dimensions

Wafer Diameter

Wafer Thickness

Maximum Width of Sawing Line

Reject Ink Dot Size

Ink Dot Location

Recommended Storage Environment

Cr - Ni - Ag (1 KA - 4 KA - 6 KA)

250 x 250 mils (see drawing)

100 mm, with std. <110> flat

330 µm ± 10 µm

130 µm

0.25 mm diameter minimum

See drawing

Storage in original container, in dessicated

nitrogen, with no contamination

www.irf.com

1

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