This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SB0767G
Silicon PNP epitaxial planar type
For low-frequency output amplification
Complementary to 2SD0875G
■
Features
■
Package
•
Large collector power dissipation P
C
•
High collector-emitter voltage (Base open) V
CEO
•
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
V
EBO
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
*
Junction temperature
Storage temperature
T
stg
Note) *: Print circuit board: Copper foil area of 1 cm
2
or more, and the board
thickness of 1.7 mm for the collector portion.
■
Electrical Characteristics
T
a
=
25°C
±
3°C
ue
Parameter
Symbol
V
CBO
V
CEO
I
CBO
h
FE2
V
EBO
nt
in
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
/D
Collector-base cutoff current (Emitter open)
ce
Forward current transfer ratio
*1
h
FE1 *2
en
Collector-emitter saturation voltage
*1
V
CE(sat)
V
BE(sat)
f
T
C
ob
nt
Base-emitter saturation voltage
*1
M
ai
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE1
Q
90 to 155
R
130 to 220
Pl
e
Publication date: October 2007
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en in
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e
fo
st
rm
ag
at
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io
n.
•
Code
MiniP3-F2
•
Pin Name
1: Base
2: Collector
3: Emitter
Rating
−80
−80
−5
−1
1
Unit
V
V
V
M
Di ain
sc te
on na
tin nc
ue e/
d
−
0.5
A
A
W
150
°C
−55
to
+150
°C
Conditions
Min
−80
−5
90
−80
I
C
= −10 µA,
I
E
=
0
I
E
= −10 µA,
I
C
=
0
I
C
= −100 µA,
I
B
=
0
V
CB
= −20
V, I
E
=
0
■
Marking Symbol: C
Typ
Max
Unit
V
V
co
V
is
−
0.1
220
µA
V
V
CE
= −10
V, I
C
= −150
mA
V
CE
= −5
V, I
C
= −500
mA
I
C
= −300
mA, I
B
= −30
mA
I
C
= −300
mA, I
B
= −30
mA
an
50
100
−
0.2
120
20
−
0.4
−
0.85
−1.20
30
V
V
CB
= −10
V, I
E
=
50 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
MHz
pF
SJD00329AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB0767G
P
C
T
a
1.4
−1.2
I
C
V
CE
T
a
=
25°C
I
B
= −10
mA
−9
mA
−8
mA
−7
mA
−6
mA
−5
mA
−4
mA
−3
mA
−2
mA
−1
mA
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−10
I
C
/ I
B
=
10
Collector power dissipation P
C
(W)
1.2
1.0
0.8
0.6
0.4
0.2
0
Copper plate at the collector
is more than 1 cm
2
in area,
1.7 mm in thickness
−1.0
Collector current I
C
(A)
−1
T
a
=
75°C
25°C
−25°C
−
0.8
−
0.6
−10
−1
−
0.4
−10
−2
−
0.2
0
0
40
80
120
160
0
−2
−4
−6
−8
−10
−10
−3
−1
−10
−10
2
−10
3
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
V
BE(sat)
I
C
−10
2
h
FE
I
C
300
V
CE
= −10
V
f
T
I
E
200
V
CB
= −10
V
T
a
=
25°C
Base-emitter saturation voltage V
BE(sat)
(V)
I
C
/ I
B
=
10
Forward current transfer ratio h
FE
Transition frequency f
T
(MHz)
−10
2
−10
3
250
160
−10
200
T
a
=
75°C
25°C
25°C
−1
T
a
= −25°C
75°C
120
150
−25°C
100
80
−10
−1
50
40
−10
−2
−1
−10
−10
2
−10
3
0
−1
−10
0
1
10
10
2
Collector current I
C
(mA)
Collector current I
C
(mA)
Emitter current I
E
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
50
I
E
=
0
f
=
1 MHz
T
a
=
25°C
−10
Safe operation area
Single pulse
T
a
=
25°C
I
CP
I
C
t
=
1s
t
=
10 ms
40
30
20
10
0
−1
Collector current I
C
(A)
−1
−10
−1
−10
−2
−10
−10
2
−10
−3
−10
−1
−1
−10
−10
2
Collector-base voltage V
CB
(V)
Collector-emitter voltage V
CE
(V)
2
SJD00329AED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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