BAP50LX
Silicon PIN diode
Rev. 01 — 17 July 2007
Product data sheet
1. Product profile
1.1 General description
General purpose PIN diode in a SOD882T leadless ultra small plastic SMD package.
1.2 Features
I
Low diode capacitance
I
Low diode forward resistance
I
For applications up to 3 GHz
1.3 Applications
I
General RF applications
2. Pinning information
Table 1.
Pin
1
2
Discrete pinning
Description
cathode
anode
[1]
Simplified outline
Symbol
1
2
sym006
Transparent
top view
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 2.
Ordering information
Name
BAP50LX
-
Description
leadless ultra small plastic package; 2 terminals;
body 1.0
×
0.6
×
0.4 mm
Version
SOD882T
Type number Package
NXP Semiconductors
BAP50LX
Silicon PIN diode
4. Marking
Table 3.
BAP50LX
Marking
Marking code
LB
Type number
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
P
tot
T
stg
T
j
Parameter
reverse voltage
forward current
total power dissipation
storage temperature
junction temperature
Conditions
continuous
continuous
T
sp
= 90
°C
Min
-
-
-
−65
−65
Max
50
50
150
+150
+150
Unit
V
mA
mW
°C
°C
6. Thermal characteristics
Table 5.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Conditions
Typ
53
Unit
K/W
7. Characteristics
Table 6.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
V
R
I
R
C
d
Parameter
forward voltage
reverse voltage
reverse current
diode capacitance
Conditions
I
F
= 50 mA
I
R
= 10
µA
V
R
= 50 V
see
Figure 1;
f = 1 MHz;
V
R
= 0 V
V
R
= 1 V
V
R
= 5 V
r
D
diode forward resistance
see
Figure 2;
f = 100 MHz;
I
F
= 0.5 mA
I
F
= 1 mA
I
F
= 10 mA
ISL
isolation
see
Figure 3;
V
R
= 0 V;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
BAP50LX_1
Min
-
50
-
-
-
-
-
-
-
-
-
-
Typ
0.95
-
-
0.40
0.28
0.19
26
14
3
20.3
17.9
16.5
Max
1.1
-
100
-
0.55
0.35
40
25
5
-
-
-
Unit
V
V
nA
pF
pF
pF
Ω
Ω
Ω
dB
dB
dB
2 of 8
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 17 July 2007
NXP Semiconductors
BAP50LX
Silicon PIN diode
Table 6.
Characteristics
…continued
T
amb
= 25
°
C unless otherwise specified.
Symbol
L
ins
Parameter
insertion loss
Conditions
see
Figure 4;
I
F
= 0.5 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
L
ins
insertion loss
see
Figure 4;
I
F
= 1 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
L
ins
insertion loss
see
Figure 4;
I
F
= 10 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
τ
L
charge carrier life time
when switched from I
F
= 10 mA to
I
R
= 6 mA; R
L
= 100
Ω;
measured at
I
R
= 3 mA
I
F
= 100 mA; f = 100 MHz
-
-
-
-
0.25
0.26
0.27
1.0
-
-
-
-
dB
dB
dB
µs
-
-
-
1.07
1.06
1.08
-
-
-
dB
dB
dB
-
-
-
1.82
1.80
1.81
-
-
-
dB
dB
dB
Min
Typ
Max
Unit
L
S
series inductance
-
0.4
-
nH
500
C
d
(fF)
400
001aag629
10
3
r
D
(Ω)
10
2
001aag630
300
10
200
1
100
0
0
4
8
12
16
V
R
(V)
20
10
−1
10
−1
1
10
I
F
(mA)
10
2
f = 1 MHz; T
j
= 25
°C.
f = 100 MHz; T
j
= 25
°C.
Fig 1. Diode capacitance as a function of reverse
voltage; typical values
Fig 2. Forward resistance as a function of forward
current; typical values
BAP50LX_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 17 July 2007
3 of 8
NXP Semiconductors
BAP50LX
Silicon PIN diode
0
ISL
(dB)
−5
001aag631
0
L
ins
(dB)
−1
(2)
(1)
001aag632
−10
−2
(3)
−15
−3
−20
−4
−25
500
1000
1500
2000
2500
3000
f (MHz)
−5
500
1000
1500
2000
2500
3000
f (MHz)
T
amb
= 25
°C
Diode zero biased and inserted in series with a 50
Ω
stripline circuit.
T
amb
= 25
°C
(1) I
F
= 10 mA
(2) I
F
= 1 mA
(3) I
F
= 0.5 mA
Diode inserted in series with a 50
Ω
stripline circuit
and biased via the analyzer Tee network.
Fig 3. Isolation of the diode in off-state as a function
of frequency; typical values
Fig 4. Insertion loss of the diode as a function of
frequency; typical values
BAP50LX_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 17 July 2007
4 of 8
NXP Semiconductors
BAP50LX
Silicon PIN diode
8. Package outline
Leadless ultra small plastic package; 2 terminals; body 1 x 0.6 x 0.4 mm
(2×)
w
M
SOD882T
L
1
(2×)
A
1
2
b (2×)
(2×)
w
e
1
M
B
A
A
1
y
E
A
D
(1)
B
0
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
0.40
0.36
A
1
max
0.04
b
0.55
0.45
D
0.65
0.55
E
1.05
0.95
e
1
0.65
L
1
0.30
0.22
w
0.1
y
0.03
0.5
scale
1 mm
Note
1.
The marking bar indicates the cathode
OUTLINE
VERSION
SOD882T
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-12-14
06-04-12
Fig 5. Package outline SOD882T
BAP50LX_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 17 July 2007
5 of 8
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