PD-97251
2N7633M2
IRHLA7670Z4
60V, Combination 2N-2P-CHANNEL
RADIATION HARDENED
TECHNOLOGY
LOGIC LEVEL POWER MOSFET
THRU-HOLE (14-LEAD FLAT PACK)
Product Summary
Part Number
IRHLA7670Z4
IRHLA7630Z4
Radiation Level
100K Rads (Si)
300K Rads (Si)
R
DS(on)
0.60Ω
1.36Ω
0.60Ω
1.36Ω
I
D
0.8A
-0.56A
0.8A
-0.56A
CHANNEL
N
P
N
P
14-Lead Flat Pack
International Rectifier’s R7
TM
Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
and post radiation. This is achieved while maintaining
single event gate rupture and single event burnout
immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Absolute Maximum Ratings (Per Die)
Parameter
ID@ VGS = ±4.5V, TC= 25°C
ID@ VGS = ±4.5V, TC=100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
Pre-Irradiation
N-Channel
0.8
0.5
3.2
0.6
0.005
±10
16
Á
0.8
0.06
10.2
Â
-55 to 150
o
C
P-Channel
-0.56
-0.35
-2.24
0.6
0.005
Units
A
W
W/°C
±10
26
²
-0.56
0.06
-5.79
³
V
mJ
A
mJ
V/ns
300 (0.63 in./1.6 mm from case for 10s)
0.52 (Typical)
g
www.irf.com
1
03/17/08
IRHLA7670Z4, 2N7633M2
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
∆V
GS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Pre-Irradiation
Min
60
—
—
1.0
—
0.23
—
—
—
—
—
—
—
—
—
—
—
—
Electrical Characteristics For Each N-Channel Device @Tj = 25°C
(Unless Otherwise specified)
Typ Max Units
—
0.067
—
—
-4.7
—
—
—
—
—
—
—
—
—
—
—
—
20
—
—
0.60
2.0
—
—
1.0
10
100
-100
2.8
0.6
1.6
6.5
2.5
35
13
—
V
V/°C
Ω
V
mV/°C
S
µA
nA
nC
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA
VGS = 4.5V, ID = 0.5A
VDS = VGS, ID = 250µA
VDS = 10V, IDS = 0.5A
Ã
VDS = 48V ,VGS = 0V
VDS = 48V,
VGS = 0V, TJ =125°C
VGS = 10V
VGS = -10V
VGS = 4.5V, ID = 0.8A
VDS = 30V
VDD = 30V, ID = 0.8A,
VGS = 5.0V, RG = 24Ω
Ã
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
ns
nH
Measured from Drain lead (6mm /0.25in
from pack.) to Source lead (6mm/0.25in
from pack.)with Source wire internally
bonded from Source pin to Drain pad
C iss
C oss
C rss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
—
—
—
—
141
38
1.4
8.0
—
—
—
—
pF
Ω
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
0.8
3.2
1.2
55
63
Test Conditions
A
V
ns
nC
T
j
= 25°C, IS = 0.8A, VGS = 0V
Ã
Tj = 25°C, IF = 0.8A, di/dt
≤
100A/µs
VDD
≤
25V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJA
Junction-to-Ambient
Min Typ Max Units
—
—
210
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
www.irf.com
Pre-Irradiation
IRHLA7670Z4, 2N7633M2
Electrical Characteristics For Each P-Channel Device @Tj = 25°C
(Unless Otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
Min
-60
Typ Max Units
—
-0.063
—
—
3.2
—
—
—
—
—
—
—
—
—
—
—
—
20
—
—
1.36
V
V/°C
Ω
Test Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1.0mA
VGS = -4.5V, ID = -0.35A
VDS = VGS, ID = -250µA
VDS = -10V, IDS = -0.35A
Ã
VDS = -48V ,VGS = 0V
VDS = -48V,
VGS = 0V, TJ =125°C
VGS = -10V
VGS = 10V
VGS = -4.5V, ID = -0.56A
VDS = -30V
VDD = -30V, ID = -0.56A,
VGS = -5.0V, RG = 24Ω
Ã
∆BV
DSS /∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
-1.0
—
∆V
GS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
0.7
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
-2.0
V
— mV/°C
—
S
-1.0
-10
µA
-100
100
2.8
1.7
1.2
22
22
40
32
—
nA
nC
ns
nH
Measured from Drain lead (6mm /0.25in
from pack.) to Source lead (6mm/0.25in
from pack.)with Source wire internally
bonded from Source pin to Drain pad
C iss
C oss
C rss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
—
—
—
—
144
41
6.6
55
—
—
—
—
pF
Ω
VGS = 0V, VDS = -25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-0.56
-2.24
-5.0
35
9.6
Test Conditions
A
V
ns
nC
T
j
= 25°C, IS = -0.56A, VGS = 0V
Ã
Tj = 25°C, IF = -0.56A, di/dt
≤
-100A/µs
VDD
≤
-25V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJA
Junction-to-Ambient
Min Typ Max Units
—
—
210
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
www.irf.com
3
IRHLA7670Z4, 2N7633M2
Radiation Characteristics
Pre-Irradiation
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each N-Channel Device @Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source On-state
Resistance (14-Lead Flat Pack)
Diode Forward Voltage
Up to 300K Rads (Si)
1
Min
60
1.0
—
—
—
—
—
—
Max
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= V
DS
, I
D
= 250µA
V
GS
= 10V
V
GS
= -10V
V
DS
= 48V, V
GS
= 0V
V
GS
= 4.5V, I
D
= 0.5A
V
GS
= 4.5V, I
D
= 0.5A
V
GS
= 0V, I
D
= 0.8A
—
2.0
100
-100
1.0
0.60
0.60
1.2
1. Part numbers IRHLA7670Z4, IRHLA7630Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area (Per Die)
Ion
LET
(MeV/(mg/cm ))
Br
I
Au
37
60
84
2
Energy
(MeV)
305
370
390
Range
(µm)
39
34
30
0V
60
60
60
-2V
60
60
60
-4V
60
60
60
-5V
60
60
60
VDS (V)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
-6V
60
60
-
-7V
35
20
-
-8V
30
15
-
-10V
20
-
-
70
60
50
40
30
20
10
0
0
-1 -2 -3 -4 -5 -6 -7 -8 -9 -10
VGS
Br
I
Au
Fig a.
Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
4
VDS
www.irf.com
Radiation Characteristics
Pre-Irradiation
IRHLA7670Z4, 2N7633M2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each P-Channel Device @Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source On-state
Resistance (14-Lead Flat Pack)
Diode Forward Voltage
Up to 300K Rads (Si)
1
Min
-60
-1.0
—
—
—
—
—
—
Max
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= -250µA
V
GS
= V
DS
, I
D
= -250µA
V
GS
= -10V
V
GS
= 10V
V
DS
= -48V, V
GS
= 0V
V
GS
= -4.5V, I
D
= -0.35A
V
GS
= -4.5V, I
D
= -0.35A
V
GS
= 0V, I
D
= -0.56A
—
-2.0
-100
100
-1.0
1.25
1.36
-5.0
1. Part numbers IRHLA7670Z4, IRHLA7630Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area (Per Die)
Ion
LET
(MeV/(mg/cm ))
Br
I
Au
37
60
84
2
Energy Range
(MeV)
305
370
390
(µm)
39
34
30
0V
-60
-60
-60
2V
-60
-60
-60
4V
-60
-60
-60
5V
-60
-60
-60
VDS (V)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
6V
-60
-60
-
7V
-50
-20
-
8V
-35
-
-
10V
-25
-
-
-70
-60
-50
-40
-30
-20
-10
0
0
1
2
3
4
5
VGS
6
7
8
9 10
Br
I
Au
Fig a.
Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
VDS
5
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