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IRFF230

Description
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205
CategoryDiscrete semiconductor    The transistor   
File Size94KB,1 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

IRFF230 Overview

Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205

IRFF230 Parametric

Parameter NameAttribute value
MakerVishay
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)5.5 A
Maximum drain-source on-resistance0.4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-205
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
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