Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
| Parameter Name | Attribute value |
| Maker | Vishay |
| package instruction | FLANGE MOUNT, O-MBFM-P2 |
| Reach Compliance Code | unknown |
| Shell connection | DRAIN |
| Configuration | Single |
| Minimum drain-source breakdown voltage | 200 V |
| Maximum drain current (Abs) (ID) | 18 A |
| Maximum drain current (ID) | 18 A |
| Maximum drain-source on-resistance | 0.18 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 220 pF |
| JEDEC-95 code | TO-204AE |
| JESD-30 code | O-MBFM-P2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -55 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 125 W |
| Maximum pulsed drain current (IDM) | 72 A |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 80 ns |
| Maximum opening time (tons) | 30 ns |
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