Power Field-Effect Transistor, 44A I(D), 60V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | TT Electronics plc |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 340 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 60 V |
| Maximum drain current (ID) | 44 A |
| Maximum drain-source on-resistance | 0.032 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-3 |
| JESD-30 code | O-MBFM-P2 |
| JESD-609 code | e1 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 176 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | TIN SILVER COPPER |
| Terminal form | PIN/PEG |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| IRF044R1 | IRF044 | IRF044-JQR-BR1 | IRF044-JQR-B | |
|---|---|---|---|---|
| Description | Power Field-Effect Transistor, 44A I(D), 60V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 | Power Field-Effect Transistor, 44A I(D), 60V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 | Power Field-Effect Transistor, 44A I(D), 60V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 | Power Field-Effect Transistor, 44A I(D), 60V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 |
| Is it Rohs certified? | conform to | incompatible | conform to | incompatible |
| Maker | TT Electronics plc | TT Electronics plc | TT Electronics plc | TT Electronics plc |
| Reach Compliance Code | compliant | compliant | compliant | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 340 mJ | 340 mJ | 340 mJ | 340 mJ |
| Shell connection | DRAIN | DRAIN | DRAIN | DRAIN |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum drain-source breakdown voltage | 60 V | 60 V | 60 V | 60 V |
| Maximum drain current (ID) | 44 A | 44 A | 44 A | 44 A |
| Maximum drain-source on-resistance | 0.032 Ω | 0.032 Ω | 0.032 Ω | 0.032 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-3 | TO-3 | TO-3 | TO-3 |
| JESD-30 code | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | METAL | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND | ROUND |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 176 A | 176 A | 176 A | 176 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO |
| Terminal form | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
DSP and ARM Processors
stm32/stm8
Analog electronics
Embedded System
stm32/stm8
PCB Design
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