PD - 95296
IRF7317PbF
Generation V Technology
l
Ultra Low On-Resistance
l
Dual N and P Channel MOSFET
l
Surface Mount
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Fully Avalanche Rated
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Lead-Free
Description
l
HEXFET
®
Power MOSFET
S1
G1
S2
G2
N-CHANNEL MOSFET
1
8
2
3
4
7
D1
D1
D2
D2
N-Ch
V
DSS
20V
P-Ch
-20V
6
5
P-CHANNEL MOSFET
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
Top View
R
DS(on)
0.029Ω 0.058Ω
SO-8
Absolute Maximum Ratings ( T
A
= 25°C Unless Otherwise Noted)
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
T
A
= 25°C
T
A
= 70°C
V
DS
V
GS
N-Channel
20
6.6
5.3
26
2.5
2.0
1.3
100
4.1
0.20
5.0
-5.0
-55 to + 150 °C
150
-2.9
Maximum
P-Channel
-20
± 12
-5.3
-4.3
-21
-2.5
Units
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
T
A
= 25°C
Maximum Power Dissipation
T
A
= 70°C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
I
DM
I
S
A
W
mJ
A
mJ
V/ ns
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
Symbol
R
θJA
Limit
62.5
Units
°C/W
5/25/04
IRF7317PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
20
-20
0.7
-0.7
Typ. Max.
0.027
0.031
0.023 0.029
0.030 0.046
0.049 0.058
0.082 0.098
20
5.9
1.0
-1.0
5.0
-25
±100
18
27
19
29
2.2 3.3
4.0 6.1
6.2 9.3
7.7 12
8.1 12
15
22
17
25
40
60
38
57
42
63
31
47
49
73
900
780
430
470
200
240
Units
V
V/°C
Ω
V
S
µA
nA
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 0V, I
D
= -250µA
Reference to 25°C, I
D
= 1mA
Reference to 25°C, I
D
= -1mA
V
GS
= 4.5V, I
D
= 6.0A
V
GS
= 2.7V, I
D
= 5.2A
V
GS
= -4.5V, I
D
= -2.9A
V
GS
= -2.7V, I
D
= -1.5A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= V
GS
, I
D
= -250µA
V
DS
= 10V, I
D
= 6.0A
V
DS
= -10V, I
D
= -1.5A
V
DS
= 16V, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 55°C
V
DS
= -16V, V
GS
= 0V, T
J
= 55°C
V
GS
= ±12V
N-Channel
I
D
= 6.0A, V
DS
= 10V, V
GS
= 4.5V
P-Channel
I
D
= -2.9A, V
DS
= -16V, V
GS
= -4.5V
N-Channel
V
DD
= 10V, I
D
= 1.0A, R
G
= 6.0Ω,
R
D
= 10Ω
P-Channel
V
DD
= -10V, I
D
= -2.9A, R
G
= 6.0Ω,
R
D
= 3.4Ω
N-Channel
V
GS
= 0V, V
DS
= 15V, = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -15V, = 1.0MHz
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nC
ns
pF
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max. Units
Conditions
2.5
-2.5
A
26
-21
0.72 1.0
T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
V
-0.78 -1.0
T
J
= 25°C, I
S
= -2.9A, V
GS
= 0V
52
77
N-Channel
ns
47
71
T
J
= 25°C, I
F
=1.7A, di/dt = 100A/µs
58
86
P-Channel
nC
T
J
= 25°C, I
F
= -2.9A, di/dt = 100A/µs
49
73
Repetitive rating; pulse width limited by
Notes:
Pulse width
≤
300µs; duty cycle
≤
2%.
max. junction temperature. ( See fig. 22 )
Surface mounted on FR-4 board, t
≤
10sec.
N-Channel I
SD
≤
4.1A, di/dt
≤
92A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
P-Channel I
SD
≤
-2.9A, di/dt
≤
-77A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
N-Channel
Starting T
J
= 25°C, L = 12mH R
G
= 25Ω, I
AS
= 4.1A. (See Figure 12)
P-Channel
Starting T
J
= 25°C, L = 35mH R
G
= 25Ω, I
AS
= -2.9A.
N-Channel
100
IRF7317PbF
VGS
7.50V
4.50V
4.00V
3.50V
3.00V
2.70V
2.00V
BOTTOM 1.50V
TOP
I
D
, Drain-to-Source Current (A)
10
I
D
, Drain-to-Source Current (A)
VGS
7.50V
4.50V
4.00V
3.50V
3.00V
2.70V
2.00V
BOTTOM 1.50V
TOP
100
10
1.50V
1.50V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
1
0.1
V
DS
, Drain-to-Source Voltage (V)
1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
100
I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
T
J
= 150
°
C
10
I
SD
, Reverse Drain Current (A)
T
J
= 150
°
C
10
T
J
= 25
°
C
1
1.5
V DS = 10V
20µs PULSE WIDTH
2.0
2.5
3.0
1
0.4
V
GS
= 0 V
0.6
0.8
1.0
1.2
1.4
1.6
V
GS
, Gate-to-Source Voltage (V)
V
SD
,Source-to-Drain Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Source-Drain Diode
Forward Voltage
IRF7317PbF
2.0
N-Channel
0.032
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 6.0A
R
DS
(on) , Drain-to-Source On Resistance (Ω)
1.5
V
GS
= 2.7V
0.028
1.0
0.024
0.5
V
GS
= 4.5V
0.020
0
10
20
30
0.0
-60 -40 -20
V
GS
= 4.5V
0
20
40
60
80 100 120 140 160
A
T
J
, Junction Temperature (
°
C)
I
D
, Drain Current (A)
Fig 5.
Normalized On-Resistance
Vs. Temperature
Fig 6.
Typical On-Resistance Vs. Drain
Current
0.05
300
R
DS
(on) , Drain-to-Source On Resistance (Ω)
E
AS
, Single Pulse Avalanche Energy (mJ)
TOP
250
0.04
BOTTOM
ID
1.8A
3.3A
4.1A
200
0.03
150
I
D
= 6.6A
0.02
100
50
0.01
0
2
4
6
8
A
0
25
V
GS
, Gate-to-Source Voltage (V)
Starting T
J
, Junction Temperature (
°
C)
50
75
100
125
150
Fig 7.
Typical On-Resistance Vs. Gate
Voltage
Fig 8.
Maximum Avalanche Energy
Vs. Drain Current
N-Channel
1600
IRF7317PbF
10
-V
GS
, Gate-to-Source Voltage (V)
C, Capacitance (pF)
1200
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
iss
C
oss
= C
ds
+ C
gd
I
D
= 6.0A
V
DS
= 10V
8
C
oss
800
6
4
C
rss
400
2
0
1
10
100
A
0
0
5
10
15
20
25
30
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 9.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
Thermal Response (Z
thJA
)
0.50
0.20
10
0.10
0.05
0.02
1
0.01
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
1
10
100
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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