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HY57V644011TC-8

Description
Synchronous DRAM, 16MX4, 6ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54
Categorystorage    storage   
File Size442KB,15 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Download Datasheet Parametric View All

HY57V644011TC-8 Overview

Synchronous DRAM, 16MX4, 6ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54

HY57V644011TC-8 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSK Hynix
Parts packaging codeTSOP2
package instructionTSOP2, TSOP54,.46,32
Contacts54
Reach Compliance Codecompliant
ECCN codeEAR99
access modeDUAL BANK PAGE BURST
Maximum access time6 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)125 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PDSO-G54
JESD-609 codee0
length22.22 mm
memory density67108864 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals54
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP54,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length1,2,4,8,FP
Maximum standby current0.002 A
Maximum slew rate0.18 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
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