DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D088
BAT754 series
Schottky barrier (double) diodes
Product data sheet
Supersedes data of 1999 Aug 05
2003 Mar 25
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
FEATURES
•
Very low forward voltage
•
Guard ring protected
•
Small plastic SMD package
•
Low diode capacitance.
APPLICATIONS
•
Ultra high-speed switching
•
Voltage clamping
•
Protection circuits
•
Blocking diodes
•
Low power consumption
applications, e.g. hand-held
applications.
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT23 small
plastic SMD package. Low forward
voltage selection of the BAT54 series.
Single diodes and double diodes with
different pinning are available.
MARKING
TYPE NUMBER
BAT754
BAT754A
BAT754C
BAT754S
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
∗
= W : Made in China.
MARKING
CODE
(1)
2K*
2L*
2M*
2N*
Fig.2
BAT754 single diode
configuration (symbol).
Fig.5
1
Top view
handbook, 2 columns
BAT754 series
PINNING
BAT754
PIN
A
1
2
3
a
n.c.
k
k
1
k
2
C
a
1
a
2
S
a
1
k
2
MLC360
3
1
2
a
1
, a
2
k
1
, k
2
k
1
, a
2
3
Fig.3
BAT754A diode
configuration (symbol).
3
1
2
1
MGC421
2
MLC359
Fig.1
Simplified outline
(SOT23) and pin
configuration.
Fig.4
BAT754C diode
configuration (symbol).
3
2
n.c.
MLC357
3
1
2
MLC358
BAT754S diode
configuration (symbol).
2003 Mar 25
2
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
T
amb
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
t
p
≤
1 s;
δ ≤
0.5
t = 8.3 ms half sinewave;
JEDEC method
−
−
−
−
PARAMETER
CONDITIONS
BAT754 series
MIN.
MAX.
UNIT
30
200
300
600
+150
125
+125
V
mA
mA
mA
°C
°C
°C
−65
−
−65
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.6
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
I
R
C
d
Note
1. Pulse test: t
p
= 300
μs; δ ≤
0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOT23 standard mounting conditions.
PARAMETER
thermal resistance from junction to
ambient
note 1
CONDITIONS
VALUE
500
UNIT
K/W
reverse current
diode capacitance
V
R
= 25 V; note 1; see Fig.7
f = 1 MHz; V
R
= 1 V; see Fig.8
−
−
−
−
600
−
−
200
260
340
420
−
2
10
mV
mV
mV
mV
mV
μA
pF
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
2003 Mar 25
3
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
GRAPHICAL DATA
MSA892
BAT754 series
10
3
handbook, halfpage
IF
(mA)
10
2
(1) (2) (3)
10
3
IR
(μA)
10
2
(2)
(1)
MSA893
10
10
1
(1)
(2) (3)
1
(3)
10
1
10
1
0
0.4
0.8
VF (V)
1.2
0
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
10
20
VR (V)
30
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
Fig.6
Forward current as a function of forward
voltage; typical values.
Fig.7
Reverse current as a function of reverse
voltage; typical values.
handbook, halfpage
15
MSA891
Cd
(pF)
10
5
0
0
10
20
VR (V)
30
f = 1 MHz; T
amb
= 25
°C.
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
2003 Mar 25
4
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
PACKAGE OUTLINE
BAT754 series
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
2003 Mar 25
5
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