DDR SDRAM 256Mb E-die (x4, x8)
DDR SDRAM
256Mb E-die DDR SDRAM Specification
66 TSOP-II
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 1.3 July. 2005
DDR SDRAM 256Mb E-die (x4, x8)
Table of Contents
DDR SDRAM
1.0 Key Features ...............................................................................................................................4
2.0 Ordering Information ...................................................................................................................4
3.0 Operating Frequencies................................................................................................................4
4.0 Pin Description ............................................................................................................................5
5.0 Package Physical Dimension .....................................................................................................6
6.0 Block Diagram (16Mbit x4 / 8Mbit x8 I/O x4 Banks) ..................................................................7
7.0 Input/Output Function Description ............................................................................................8
8.0 Command Truth Table.................................................................................................................9
9.0 General Description...................................................................................................................10
10.0 Absolute Maximum Rating .....................................................................................................10
11.0 DC Operating Conditions ........................................................................................................10
12.0 DDR SDRAM Spec Items & Test Conditions .........................................................................11
13.0 Input/Output Capacitance .......................................................................................................11
14.0 Detailed test condition for DDR SDRAM IDD1 & IDD7A ......................................................12
15.0 DDR SDRAM IDD spec table ..................................................................................................13
16.0 AC Operating Conditions .......................................................................................................14
17.0 AC Overshoot/Undershoot specification for Address and Control Pins ...........................14
18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins...............................15
19.0 AC Timming Parameters & Specifications ...........................................................................16
20.0 System Characteristics for DDR SDRAM ..............................................................................17
21.0 Component Notes ....................................................................................................................18
22.0 System Notes ...........................................................................................................................20
23.0 IBIS : I/V Characteristics for Input and Output Buffers ........................................................21
Rev. 1.3 July. 2005
DDR SDRAM 256Mb E-die (x4, x8)
Revision History
Revision
1.0
1.1
1.2
1.3
Month
April
August
October
June
Year
2003
2003
2004
2005
- First version release
- Corrected typo.
- Corrected typo.
- Changed master format.
History
DDR SDRAM
Rev. 1.3 July. 2005
DDR SDRAM 256Mb E-die (x4, x8)
1.0 Key Features
• VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333
• VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
-. Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• LDM,UDM for write masking only (x16)
• DM for write masking only (x4, x8)
• Auto & Self refresh
• 7.8us refresh interval(8K/64ms refresh)
• Maximum burst refresh cycle : 8
• 66pin TSOP II
Leaded & Pb-Free(RoHS compliant)
package
DDR SDRAM
2.0 Ordering Information
Part No.
K4H560438E-T(U)C/LB3
K4H560438E-T(U)C/LA2
K4H560438E-T(U)C/LB0
K4H560838E-T(U)C/LCC
K4H560838E-T(U)C/LB3
K4H560838E-T(U)C/LA2
K4H560838E-T(U)C/LB0
32M x 8
64M x 4
Org.
Max Freq.
B3(DDR333@CL=2.5)
A2(DDR266@CL=2)
B0(DDR266@CL=2.5)
CC(DDR400@CL=3)
B3(DDR333@CL=2.5)
A2(DDR266@CL=2)
B0(DDR266@CL=2.5)
SSTL2
66pin TSOP II
SSTL2
66pin TSOP II
Interface
Package
Note : Leaded and Lead-free(Pb-free) can be discriminated by PKG P/N (T : 66 TSOP with Leaded, U : 66 TSOP with Lead-free)
3.0 Operating Frequencies
CC(DDR400@CL=3)
Speed @CL2
Speed @CL2.5
Speed @CL3
CL-tRCD-tRP
-
166MHz
200MHz
3-3-3
B3(DDR333@CL=2.5)
133MHz
166MHz
-
2.5-3-3
A2(DDR266@CL=2.0)
133MHz
133MHz
-
2-3-3
B0(DDR266@CL=2.5)
100MHz
133MHz
-
2.5-3-3
Rev. 1.3 July. 2005
DDR SDRAM 256Mb E-die (x4, x8)
4.0 Pin Description
DDR SDRAM
32Mb x 8
64Mb x 4
V
DD
DQ
0
V
DDQ
NC
DQ
1
V
SSQ
NC
DQ
2
V
DDQ
NC
DQ
3
V
SSQ
NC
NC
V
DDQ
NC
NC
V
DD
NC
NC
WE
CAS
RAS
CS
NC
BA
0
BA
1
AP/A
10
A
0
A
1
A
2
A
3
V
DD
V
DD
NC
V
DDQ
NC
DQ
0
V
SSQ
NC
NC
V
DDQ
NC
DQ
1
V
SSQ
NC
NC
V
DDQ
NC
NC
V
DD
NC
NC
WE
CAS
RAS
CS
NC
BA
0
BA
1
AP/A
10
A
0
A
1
A
2
A
3
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
66
65
64
63
62
61
60
59
58
V
SS
NC
V
SSQ
NC
DQ
3
V
DDQ
NC
NC
V
SSQ
NC
DQ
2
V
DDQ
NC
NC
V
SSQ
DQS
NC
V
REF
V
SS
DM
CK
CK
CKE
NC
A
12
A
11
A
9
A
8
A
7
A
6
A
5
A
4
V
SS
V
SS
DQ
7
V
SSQ
NC
DQ
6
V
DDQ
NC
DQ
5
V
SSQ
NC
DQ
4
V
DDQ
NC
NC
V
SSQ
DQS
NC
V
REF
V
SS
DM
CK
CK
CKE
NC
A
12
A
11
A
9
A
8
A
7
A
6
A
5
A
4
V
SS
66Pin TSOPII
(400mil x 875mil)
(0.65mm Pin Pitch)
Bank Address
BA0~BA1
Auto Precharge
A10
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
256Mb TSOPII Package Pinout
Organization
64Mx4
32Mx8
Row Address
A0~A12
A0~A12
Column Address
A0-A9, A11
A0-A9
DM is internally loaded to match DQ and DQS identically.
Row & Column address configuration
Rev. 1.3 July. 2005
京公网安备 11010802033920号
EEWORLD
