SB830FCT_T0_10001 datasheet, PDF

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SB830FCT_T0_10001: DescriptionRectifier Diode, Schottky, 1 Phase, 2 Element, 4A, 30V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN; CategoryDiscrete semiconductor diode; File Size112KB，4 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SB830FCT_T0_10001 Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 4A, 30V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN

SB830FCT_T0_10001 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	ITO-220AB, 3 PIN
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	FREE WHEELING DIODE, LOW POWER LOSS
application	EFFICIENCY
Shell connection	ISOLATED
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.55 V
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Maximum non-repetitive peak forward current	150 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Maximum output current	4 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	30 V
Maximum reverse current	200 µA
surface mount	NO
technology	SCHOTTKY
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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SB820FCT SERIES

SCHOTTKY BARRIER RECTIFIER

VOLTAGE

FEATURES

0.112(2.85)

0.100(2.55)

0.134(3.4)

0.118(3.0)

0.272(6.9)

0.248(6.3)

20 to 60 Volt

CURRENT

8 Ampere

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O utilizing

Flame Retardant Epoxy Molding Compound.

• Low power loss, high efficiency.

• Low forward voltage, high current capability

• High surge capacity.

• For use in low voltage, high frequency inverters

free wheeling, and polarlity protection applications.

• Lead free in compliance with EU RoHS 2011/65/EU directive

0.406(10.3)

0.381(9.7)

0.189(4.8)

0.165(4.2)

0.130(3.3)

0.114(2.9)

0.606(15.4)

0.583(14.8)

MECHANICAL DATA

• Case: ITO-220AB full molded plastic package

• Terminals: Lead solderable per MIL-STD-750, Method 2026

• Polarity: As marked.

• Weight: 0.056 ounces, 1.6 grams.

0.055(1.4)

0.039(1.0)

0.055(1.4)

0.039(1.0)

0.028(0.7)

0.019(0.5)

0.100(2.55)

0.177(4.5)

0.137(3.5)

0.543(13.8)

0.512(13.0)

0.114(2.9)

0.098(2.5)

0.100(2.55)

0.027(0.67)

0.022(0.57)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

PARAM ETER

M a ximum Re c ur r e nt Pe ak Re ve r s e Vo lt a g e

M a ximum RM S Vo lt a g e

M a ximum DC Blo c k ing Vo l t a g e

M a ximum Ave r ag e Fo r w a r d Cur r e nt a t T

= 75

Pe a k Fo r w a r d Sur g e Cur r ent : 8 . 3 ms s ing l e ha lf s i ne - w a ve

s up e r imp o s e d o n r a t e d lo a d

M a ximum Fo r w a r d Vol t a g e a t 4A

M a ximum DC Re ver s e Cur r e nt a t Ra t e d DC

Blo c k ing Vo lt a g e

Typ ic a l The r ma l R e s i s t a nc e

O p er a t i ng J unc t io n Te mp e r at ur e Ra ng e

St o r a g e Te mp e r a t ur e Ra ng e

= 2 5

= 1 0 0

SY M BO L

RRM

RMS

F( AV)

FSM

ST G

SB8 20 FCT SB83 0FCT SB8 40FCT SB8 45FCT SB85 0FCT SB86 0FCT

UNI TS

150

0.55

0.128(3.25)

MIN.

0.75

0. 1

0.2

C / W

-55 t o +125

-55 t o +150

-55 to +150

NOTES : Both Bonding and Chip structure are available.

April 23,2015-REV.05

PAGE . 1

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