Power Transistors
2SB0949
(2SB949)
, 2SB0949A
(2SB949A)
Silicon PNP epitaxial planar type darlington
4.2
±0.2
Unit: mm
0.7
±0.1
10.0
±0.2
5.5
±0.2
4.2
±0.2
2.7
±0.2
For power amplification and switching
Complementary to 2SD1275 and 2SD1275A
•
High forward current transfer ratio h
FE
•
High-speed switching
•
Full-pack package which can be installed to the heat sink with one screw
16.7
±0.3
7.5
±0.2
■
Features
φ
3.1
±0.1
Solder Dip
(4.0)
14.0
±0.5
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage
(Emitter open)
2SB0949
2SB0949A
V
CEO
V
EBO
I
C
I
CP
T
C
=
25°C
P
C
T
j
T
stg
Symbol
V
CBO
Rating
−60
−80
−60
−80
−5
−2
−4
35
2
150
−55
to
+150
°C
°C
V
A
A
W
V
Unit
V
1.4
±0.1
1.3
±0.2
0.5
+0.2
–0.1
0.8
±0.1
2.54
±0.3
5.08
±0.5
Collector-emitter voltage 2SB0949
(Base open)
2SB0949A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Storage temperature
1 2 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Internal Connection
C
B
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-emitter voltage
(Base open)
Base-emitter voltage
Collector-base cutoff
current (Emitter open)
Collector-emitter cutoff
current (Base open)
2SB0949
2SB0949A
2SB0949
2SB0949A
I
EBO
h
FE1
h
FE2 *
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
f
T
t
on
t
stg
t
f
I
CEO
2SB0949
2SB0949A
V
BE
I
CBO
V
CE
= −4
V, I
C
= −2
A
V
CB
= −60
V, I
E
=
0
V
CB
= −80
V, I
E
=
0
V
CE
= −30
V, I
B
=
0
V
CE
= −40
V, I
B
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −4
V, I
C
= −1
A
V
CE
= −4
V, I
C
= −2
A
I
C
= −2
A, I
B
= −8
mA
V
CE
= −10
V, I
C
= −
0.5 A, f
=
1 MHz
I
C
= −2
A, I
B1
= −8
mA, I
B2
=
8 mA
V
CC
= −50
V
20
0.4
1.5
0.5
1 000
1 000
Symbol
V
CEO
Conditions
I
C
= −30
mA, I
B
=
0
Min
−60
−80
Typ
E
Max
Unit
V
−2.8
−1
−1
−2
−2
−2
10 000
−2.5
V
MHz
µs
µs
µs
mA
mA
V
mA
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE2
R
1 000 to 2 500
Q
P
2 000 to 5 000 4 000 to 10 000
Note) The part numbers in the parenthesis show conventional part number.
Publication date: April 2003
SJD00028BED
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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harm the human body.
•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
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Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
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2002 JUL
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