MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors
NPN Silicon
2N4400
2N4401*
*Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
40
60
6.0
600
625
5.0
1.5
12
– 55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Base Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
Collector Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
1. Pulse Test: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%.
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEV
ICEX
40
60
6.0
—
—
—
—
—
0.1
0.1
Vdc
Vdc
Vdc
µAdc
µAdc
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–27
2N4400 2N4401
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
hFE
2N4401
2N4400
2N4401
2N4400
2N4401
2N4400
2N4401
2N4400
2N4401
VCE(sat)
VBE(sat)
20
20
40
40
80
50
100
20
40
—
—
0.75
—
—
—
—
—
—
150
300
—
—
0.4
0.75
0.95
1.2
Vdc
Vdc
—
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 150 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
Collector – Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc)
Collector – Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
Base – Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc)
Base – Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
Collector–Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
2N4400
2N4401
hoe
2N4400
2N4401
hre
hfe
20
40
1.0
250
500
30
µmhos
fT
2N4400
2N4401
Ccb
Ceb
hie
0.5
1.0
0.1
7.5
15
8.0
X 10–4
—
200
250
—
—
—
—
6.5
30
pF
pF
k ohms
MHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(
(VCC = 30 Vdc, VBE = 2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
(
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
td
tr
ts
tf
—
—
—
—
15
20
225
30
ns
ns
ns
ns
1. Pulse Test: Pulse Width
≤
300
m
s, Duty Cycle
≤
2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ 30 V
+16 V
0
– 2.0 V
1.0 to 100
µs,
DUTY CYCLE
≈
2.0%
1.0 kΩ
< 2.0 ns
200
Ω
+16 V
0
CS* < 10 pF
–14 V
< 20 ns
1.0 kΩ
CS* < 10 pF
1.0 to 100
µs,
DUTY CYCLE
≈
2.0%
+ 30 V
200
Ω
– 4.0 V
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
2–28
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2N4400 2N4401
TRANSIENT CHARACTERISTICS
25°C
30
20
CAPACITANCE (pF)
Q, CHARGE (nC)
Cobo
10
7.0
5.0
Ccb
3.0
2.0
0.1
100°C
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2 0.3 0.5
2.0 3.0 5.0
10
1.0
REVERSE VOLTAGE (VOLTS)
20 30
50
10
20
200
50 70 100
30
IC, COLLECTOR CURRENT (mA)
300
500
QT
VCC = 30 V
IC/IB = 10
QA
Figure 3. Capacitances
Figure 4. Charge Data
100
70
50
t, TIME (ns)
t, TIME (ns)
30
20
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VEB = 2.0 V
td @ VEB = 0
IC/IB = 10
100
70
tr
50
30
20
tf
VCC = 30 V
IC/IB = 10
10
7.0
5.0
10
20
30
50
70
100
200
300
500
IC, COLLECTOR CURRENT (mA)
10
7.0
5.0
10
20
30
50
70
100
200
300
500
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
Figure 6. Rise and Fall Times
300
200
t s
′
, STORAGE TIME (ns)
ts
′
= ts – 1/8 tf
IB1 = IB2
IC/IB = 10 to 20
t f , FALL TIME (ns)
100
70
50
30
20
IC/IB = 10
IC/IB = 20
VCC = 30 V
IB1 = IB2
100
70
50
10
7.0
30
5.0
10
20
30
50
70
100
200
300
500
10
20
30
50
70
100
200
300
500
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Figure 8. Fall Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–29
2N4400 2N4401
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
Bandwidth = 1.0 Hz
10
IC = 1.0 mA, RS = 150
Ω
IC = 500
µA,
RS = 200
Ω
IC = 100
µA,
RS = 2.0 kΩ
IC = 50
µA,
RS = 4.0 kΩ
RS = OPTIMUM
RS =
SOURCE
RS =
RESISTANCE
10
f = 1.0 kHz
8.0
NF, NOISE FIGURE (dB)
IC = 50
µA
IC = 100
µA
IC = 500
µA
IC = 1.0 mA
8.0
NF, NOISE FIGURE (dB)
6.0
6.0
4.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2
2.0
0
0.5 1.0 2.0 5.0
10
20
50
100
50
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
f, FREQUENCY (kHz)
Figure 9. Frequency Effects
Figure 10. Source Resistance Effects
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship between
selected from both the 2N4400 and 2N4401 lines, and the
hfe and other “h” parameters for this series of transistors. To
same units were used to develop the correspondingly num-
obtain these curves, a high–gain and a low–gain unit were
bered curves on each graph.
300
hie , INPUT IMPEDANCE (OHMS)
200
hfe , CURRENT GAIN
50 k
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
20 k
10 k
5.0 k
100
70
50
30
20
0.1
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
2.0 k
1.0 k
500
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 11. Current Gain
10
h re , VOLTAGE FEEDBACK RATIO (X 10
–4
)
hoe, OUTPUT ADMITTANCE (
m
mhos)
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
100
50
Figure 12. Input Impedance
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
20
10
5.0
2.0
1.0
0.1
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 13. Voltage Feedback Ratio
2–30
Figure 14. Output Admittance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2N4400 2N4401
STATIC CHARACTERISTICS
3.0
h FE, NORMALIZED CURRENT GAIN
2.0
VCE = 1.0 V
VCE = 10 V
TJ = 125°C
1.0
25°C
0.7
0.5
0.3
0.2
0.1
– 55°C
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mA)
30
50
70
100
200
300
500
Figure 15. DC Current Gain
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1.0
TJ = 25°C
0.8
0.6
IC = 1.0 mA
10 mA
100 mA
500 mA
0.4
0.2
0
0.01
0.02 0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7 1.0
IB, BASE CURRENT (mA)
2.0
3.0
5.0 7.0
10
20
30
50
Figure 16. Collector Saturation Region
1.0
TJ = 25°C
0.8
VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 10
COEFFICIENT (mV/
°
C)
+ 0.5
0
– 0.5
– 1.0
– 1.5
– 2.0
– 2.5
0.1 0.2
q
VC for VCE(sat)
0.6
VBE @ VCE = 10 V
0.4
0.2
VCE(sat) @ IC/IB = 10
q
VB for VBE
0.5
50
1.0 2.0
5.0 10 20
IC, COLLECTOR CURRENT (mA)
100 200
500
0
0.1 0.2
0.5
50
1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
100 200
500
Figure 17. “On” Voltages
Figure 18. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–31
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